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CFS0303-SB-0G00 Datasheet(PDF) 2 Page - Mimix Broadband |
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CFS0303-SB-0G00 Datasheet(HTML) 2 Page - Mimix Broadband |
2 / 17 page 0.1-10.0 GHz Low Noise, Medium Power pHEMT in a Surface Mount Plastic Package Page 2 of 17 CFS0303-SB Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Characteristic Data and Specifications are subject to change without notice. ©2006 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. May 2006 - Rev 23-May-06 Electrical Characteristics Ta=25ºC, Typical device RF parameters measured in test system. Parameters Test Conditions Min Typ Max Units Saturated Drain Current1 Vds=1.5V, Vgs=0V 120 165 200 mA Pinch-off Voltage 1 Vds=1.5V, Ids=10% of Idss -0.8 -0.65 -0.5 V No RF, Quiescent Bias Current Vgs=0.45V, Vds=2V 60 mA Transconductance1 Vds=2.5V. Gm=Idss/Vp 190 250 mmho Gate to Drain Leakage Current Vgd = 5 250 µA Gate Leakage Current Vgd=Vgs= -4V 10 150 µA Noise Figure f=1000MHz Vds=2V, Ids=10mA 0.3 dB Vds=2V, Ids=20mA 0.35 dB Vds=3V, Ids=20mA 0.3 0.7 dB Vds=3V, Ids=60mA 0.18 0.53 dB f=2GHz Vds=2V, Ids=10mA 0.4 dB Vds=2V, Ids=20mA 0.37 dB Vds=3V, Ids=20mA 0.4 0.8 dB Vds=3V, Ids=60mA 0.26 0.61 dB Associated Gain 2 f=1000MHz Vds=2V, Ids=10mA 19.7 dB Vds=2V, Ids=20mA 20.8 dB Vds=3V, Ids=20mA 21.1 dB Vds=3V, Ids=60mA 22.4 dB f=2GHz Vds=2V, Ids=10mA 13.1 14.6 16.1 dB Vds=2V, Ids=20mA 15.5 dB Vds=3V, Ids=20mA 15.7 dB Vds=3V, Ids=60mA 15.3 16.8 18.3 dB Output Third Order Intercept Point f=1000MHz Vds=2V, Ids=10mA 22.5 dBm Vds=2V, Ids=20mA 24.5 dBm Vds=3V, Ids=20mA 24.0 26.5 dBm Vds=3V, Ids=60mA 32.0 dBm f=2GHz Vds=2V, Ids=10mA 23.0 dBm Vds=2V, Ids=20mA 25.5 dBm Vds=3V, Ids=20mA 24.5 27.0 dBm Vds=3V, Ids=60mA 32.5 dBm 1 dB Gain Compression Point 2 f=1000MHz Vds=2V, Ids=10mA 12.5 dBm Vds=2V, Ids=20mA 12.5 dBm Vds=3V, Ids=20mA 14.0 16.0 dBm Vds=3V, Ids=60mA 17.0 dBm f=2GHz Vds=2V, Ids=10mA 12.5 dBm Vds=2V, Ids=20mA 12.5 dBm Vds=3V, Ids=20mA 14.0 16.0 dBm Vds=3V, Ids=60mA 17.0 dBm Notes: 1. Guaranteed at wafer probe. 2. Measurements obtained at fixed tuned system. Absolute Maximum Ratings 1 Parameter Rating Parameter Rating Parameter Rating Drain-Source Voltage 2 +5.5 V Drain Current 2 Idss 3 A Channel Temperature +175ºC Gate-Source Voltage 2 -5.0 V Total Pwr Dissipation 560 mW Storage Temperature -65ºC to +160ºC Gate-Drain Voltage 2 -5.0 V RF Input Power 17 dBm Thermal Resistance 98ºC/W Notes: 1. Operation of this device above any one of these parameters may cause permanent damage 2. Assumes DC quiescent conditions. RF OFF. 3. Vgs=0V |
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