SHD114536
SHD114536A
SHD114536B
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 4520, REV. -
POWER SCHOTTKY RECTIFIER
Low Reverse Leakage
Applications:
• Switching Power Supply • Converters • Free-Wheeling Diodes • Polarity Protection Diode
Features:
•
Ultra Low Reverse Leakage Current
•
Soft Reverse Recovery at Low and High Temperature
•
Low Forward Voltage Drop
•
Low Power Loss, High Efficiency
•
High Surge Capacity
•
Guard Ring for Enhanced Durability and Long Term Reliability
•
Guaranteed Reverse Avalanche Characteristics
Maximum Ratings:
Characteristics
Symbol
Condition
Max.
Units
Peak Inverse Voltage
VRWM
-
200
V
Max. Average Forward
Current
IF(AV)
50% duty cycle, rectangular
wave form
60
A
Max. Peak One Cycle Non-
Repetitive Surge Current
IFSM
8.3 ms, half Sine wave
(per leg)
860
A
Non-Repetitive Avalanche
Energy
EAS
TJ = 25 °C, IAS = 1.3 A,
L = 40mH (per leg)
27
mJ
Repetitive Avalanche
Current
IAR
IAS decay linearly to 0 in 1 µs
ƒ limited by T
J max VA=1.5VR
1.3
A
Thermal Resistance
RthJC
Per Package
0.35
°C/W
Max. Junction Temperature
TJ
-
-65 to +200
°C
Max. Storage Temperature
Tstg
-
-65 to +200
°C
Electrical Characteristics:
Characteristics
Symbol
Condition
Max.
Units
Max. Forward Voltage Drop
VF1
@ 60A, Pulse, TJ = 25 °C
(per leg) measured at the leads
0.95
V
VF2
@ 60A, Pulse, TJ = 125 °C
(per leg) measured at the leads
0.79
V
Max. Reverse Current
IR1
@VR = 200V, Pulse,
TJ = 25 °C (per leg)
0.045
mA
IR2
@VR = 200V, Pulse,
TJ = 125 °C (per leg)
3.0
mA
Max. Junction Capacitance
CT
@VR = 5 V, TC = 25 °C
fSIG = 1 MHz,
VSIG = 50mV (p-p) (per leg)
900
pF
Due to the nature of the 200V Schottky devices, some degradation in trr performance at high temperatures should
be expected, unlike conventional lower voltage Schottkys.
• 221 West Industry Court
Deer Park, NY 11729-4681
(631) 586-7600 FAX (631) 242-9798
•
• World Wide Web Site - http://www.sensitron.com • E-Mail Address - sales@sensitron.com •
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