3236 Scott Boulevard

Santa Clara, California 95054

Phone: (408) 986-5060

Fax: (408) 986-5095

2.0 to 6.0 GHz

GaAs MMIC

Low-Noise Amplifier

Advanced Product Information

May 2005 V1.5

(1 of 5)

Features

❏ Small Size: 1.60 x 1.55 x 0.076 mm

❏ Integrated On-Chip Drain Bias Coil

❏ Integrated On-Chip DC Blocking

❏ Single Bias Operation

❏ Directly Cascadable – Fully Matched, Novel

Feedback & Distributed Amplifier Design

❏ P1dB: 15.5 dBm @ 6 GHz, Typ.

❏ High Linear Gain: 17.5 dB Typ.

❏ Noise Figure: 3.3 dB Typ. @ 6 GHz

❏ pHEMT Technology

❏ Silicon Nitride Passivation

Parameters

Units

Min

Typ

Max

Frequency Range

GHz

2.0

6.0

Linear Gain

dB

16.0

17.5

Gain Variation (over operating frequency)

±dB

2.0

Power Output (@1 dB Gain Compression)

dBm

14.0

15.5

P1dB Variation (over operating frequency)

dBm

1.0

Saturated Output Power

dBm

19.0

23.0

Third Order Intercept Point (@ 6 GHz)

dBm

25.5

Second Order Intercept Point (@ 6 GHz)

dBm

41.0

Noise Figure (@6 GHz)

dB

3.3

3.8

Input Return Loss 2

dB

-9.5

Output Return Loss 2

dB

-12.0

Current

mA

85

100

115

Thermal Resistance

°C/W

34.0

Stability

Unconditionally Stable

Parameter

Rating

Drain Voltage

4.5V (min.) / 8.0V (max.)

Drain Current

150 mA

Continuous Power Dissipation

1.2 W

Input Power

10 dBm

Storage Temperature

-50°C to +150°C

Channel Temperature

175°C

-40°C Min.

Die Attach and Bonding Procedures

Die Attach: Eutectic die attach is recommended. For eutec-

tic die attach: Preform: AuSn (80% Au, 20% Sn); Stage

Temperature: 290°C, ±5°C; Handling Tool: Tweezers; Time: 1

min or less.

Wire Bonding: Wire Size: 0.7 to 1.0 mil in diameter (pre-

stressed); Thermocompression bonding is preferred over ther-

mosonic bonding.

For thermocompression bonding: Stage

Temperature: 250°C; Bond Tip Temperature: 150°C; Bonding

Tip Pressure: 18 to 40 gms depending on size of wire.

CMM1200-BD

Chip Diagram

Notes: 1. Tested on Celeritek connectorized evaluation board.

2. Measured on wafer.

Notes: 1. Operation outside these limits can cause permanent damage.

2. Calculation maximum operating temperature:

Tmax = 175–(Pdis [W] x 34) [°C].