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Features

Fourteen 32K Word (64K Byte) Sectors with Individual Write Lockout

Two 16K Word (32K Byte) Sectors with Individual Write Lockout

Two 8K Word (16K Byte) Sectors with Individual Write Lockout

Four 4K Word (8K Byte) Sectors with Individual Write Lockout

Memory Plane A: Four 4K Word, Two 8K Word and Two 16K Word Sectors

Memory Plane B: Fourteen 32K Word Sectors

– Supports Reading/Programming Data from Any Sector by Suspending Erase of

Any Different Sector

– 25 mA Active

– 10 µA Standby

Description

The AT49BV/LV8011(T) is a 2.7- to 3.3-volt 8-megabit Flash memory organized as

524,288 words of 16 bits each or 1,048,576 bytes of 8 bits each. The x16 data

appears on I/O0 - I/O15; the x8 data appears on I/O0 - I/O7. The memory is divided

into 22 sectors for erase operations. The device is offered in 48-pin TSOP and 48-ball

CBGA packages. The device has CE, and OE control signals to avoid any bus

Rev. 1265E–01/00

8-megabit

(512K x 16/1M x 8)

3-volt Only

Flash Memory

AT49BV8011

AT49BV8011T

AT49LV8011

AT49LV8011T

Pin Configurations

Pin Name

Function

A0 - A18

Addresses

CE

Chip Enable

OE

Output Enable

WE

Write Enable

RESET

Reset

RDY/BUSY

READY/BUSY Output

VPP

Optional Power Supply for Faster

Program/Erase Operations

I/O0 - I/O14

Data Inputs/Outputs

I/O15 (A-1)

I/O15 (Data Input/Output, Word Mode)

A-1 (LSB Address Input, Byte Mode)

BYTE

Selects Byte or Word Mode

NC

No Connect

VCCQ

Output Power Supply

(continued)