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M470L3224DT0-LA0 Datasheet(PDF) 10 Page - Samsung semiconductor

Part # M470L3224DT0-LA0
Description  256MB DDR SDRAM MODULE
Download  12 Pages
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Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

M470L3224DT0-LA0 Datasheet(HTML) 10 Page - Samsung semiconductor

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M470L3224DT0
Rev. 0.1 Jan. 2002
200pin DDR SDRAM SODIMM
8. I/O Setup/Hold Plateau Derating
This derating table is used to increase tDS/tDH in the case where the input level is flat below VREF
± 310mV for a duration of
up to 2ns.
9. I/O Delta Rise/Fall Rate(1/slew-rate) Derating
This derating table is used to increase tDS/tDH in the case where the DQ and DQS slew rates differ. The Delta Rise/Fall Rate
is calated as 1/SlewRate1-1/SlewRate2. For example, if slew rate 1 = 5V/ns and slew rate 2 =.4V/ns then the Delta Rise/Fall
Rate =-0/5ns/V. Input S/H slew rate based on larger of AC-AC delta rise/fall rate and DC-DC delta rise/fall rate.
10. This parameter is fir system simulation purpose. It is guranteed by design.
11. For each of the terms, if not already an integer, round to the next highest integer. tCK is actual to the system clock cycle time.
I/O Input Level
∆tDS
∆tDH
(mV)
(ps)
(ps)
± 280
+50
+50
Delta Rise/Fall Rate
∆tDS
∆tDH
(ns/V)
(ps)
(ps)
0
0
0
±0.25
+50
+50
±0.5
+100
+100
The following table specifies derating values for the specifications listed if the single-ended clock skew rate is less than 1.0V/ns.
CK slew rate
(Single ended)
∆tIH/tIS
(ps)
∆tDSS/tDSH
(ps)
∆tAC/tDQSCK
(ps)
∆tLZ(min)
(ps)
∆tHZ(max)
(ps)
1.0V/ns
0
0
0
0
0
0.75V/ns
+50
+50
+50
-50
+50
0.5V/ns
+100
+100
+100
-100
+100
<Reference>


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