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STS2300 Datasheet(PDF) 1 Page - SamHop Microelectronics Corp. |
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STS2300 Datasheet(HTML) 1 Page - SamHop Microelectronics Corp. |
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1 / 7 page  20 N-Channel E nhancement Mode Field E ffect Trans is tor MAR . 10 2004 AB S OLUTE MAXIMUM R ATING (TA=25 C unles s otherwis e noted) Parameter S ymbol Limit Unit Drain-S ource Voltage VDS V Gate-S ource Voltage VGS V Drain Current-Continuous @ TJ=125 C -Pulsed ID 3.8 A A A W IDM 15 Drain-S ource Diode Forward Current IS 1.25 Maximum Power Dissipation PD Operating Junction and S torage Temperature R ange TJ, TS TG -55 to 150 C THE R MAL CHAR ACTE R IS TICS Thermal R esistance, Junction-to-Ambient R thJA 100 /W C S T S 2300 1.25 a a a a b G D S S OT-23 1 S amHop Microelectronics C orp. P R ODUC T S UMMAR Y V DS S ID R DS (ON) ( m W ) Max 20V 3.8A 40 @ V GS = 4.5V F E AT UR E S S uper high dense cell design for low R DS(ON). R ugged and reliable. S OT-23 package. 10 60 @ V GS = 2.5V 75 @ V GS = 1.8V S G D |
Similar Part No. - STS2300 |
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Similar Description - STS2300 |
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