RA06H8285M-E01 datasheet(2/8 Pages) MITSUBISHI

Part #	RA06H8285M-E01

Description	MITSUBISHI RF MOSFET MODULE

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Manufacturer	MITSUBISHI [Mitsubishi Electric Semiconductor]

Direct Link	http://www.mitsubishichips.com

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MITSUBISHI RF POWER MODULE

RA06H8285M

MITSUBISHI ELECTRIC

23 Dec 2002

2/9

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

MAXIMUM RATINGS (Tcase=+25°C, unless otherwise specified)

SYMBOL

PARAMETER

CONDITIONS

RATING

UNIT

VDD

Drain Voltage

VGG<5V

17

V

VGG

Gate Voltage

VDD<12.5V, Pin=0mW

6

V

Input Power

10

mW

Pout

Output Power

f=820-851MHz,

ZG=ZL=50

Ω

10

W

Tcase(OP)

Operation Case Temperature Range

-30 to +110

°C

Tstg

Storage Temperature Range

-40 to +110

°C

The above parameters are independently guaranteed.

ELECTRICAL CHARACTERISTICS (Tcase=+25°C, ZG=ZL=50

Ω, unless otherwise specified)

SYMBOL PARAMETER

CONDITIONS

MIN

TYP

MAX

UNIT

f

Frequency Range

820

851

MHz

Pout

Output Power

VDD=12.5V, VGG=5V

6

W

ηT

Total Efficiency

35

%

2fo

2

nd Harmonic

-30

dBc

ρin

Input VSWR

4:1

—

IGG

Gate Current

Pout=6W(VGG control)

VDD=12.5V

Pin=1mW

1

mA

—

Stability

VDD=10.0-16.0V, Pin=1-4mW,

Pout<9W (VGG control), Load VSWR=4:1

No parasitic oscillation

—

Load VSWR Tolerance

VDD=15.2V, Pin=1mW, Pout=6W (VGG control),

Load VSWR=20:1

No degradation or destroy

—

All parameters, conditions, ratings, and limits are subject to change without notice.

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RA06H8285M-E01 Datasheet(PDF) 2 Page - Mitsubishi Electric Semiconductor

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