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BTW68N1000 Datasheet(PDF) 2 Page - STMicroelectronics

Part # BTW68N1000
Description  HIGH SURGE CAPABILITY
Download  5 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

BTW68N1000 Datasheet(HTML) 2 Page - STMicroelectronics

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GATE CHARACTERISTICS (maximum values)
Symbol
Parameter
Value
Unit
Rth (j-a)
Junction to ambient
50
°C/W
Rth (j-c) DC Junction to case for DC
BTW 68
1.1
°C/W
BTW 68 N
0.8
Symbol
Test Conditions
Value
Unit
BTW 68
BTW 68 N
IGT
VD=12V
(DC)
RL=33Ω
Tj=25
°C
MAX
50
mA
VGT
VD=12V
(DC)
RL=33Ω
Tj=25
°C
MAX
1.5
V
VGD
VD=VDRM RL=3.3kΩ
Tj= 125
°C
MIN
0.2
V
tgt
VD=VDRM IG = 200mA
dIG/dt = 1.5A/µs
Tj=25
°C
TYP
2
µs
IL
IG= 1.2 IGT
Tj=25
°C
TYP
40
mA
IH
IT= 500mA
gate open
Tj=25
°C
MAX
75
mA
VTM
BTW 68
ITM= 60A
BTW 68 N ITM= 70A
tp= 380
µs
Tj=25
°C
MAX
2.1
2.2
V
IDRM
IRRM
VDRM Rated
VRRM Rated
Tj=25
°C
MAX
0.02
mA
Tj= 125
°C6
dV/dt
Linear slope up to
VD=67%VDRM
gate open
VDRM≤ 800V
VDRM ≥ 1000V
Tj= 125
°C
MIN
500
250
V/
µs
tq
VD=67%VDRM
ITM= 60A
VR= 75V
dITM/dt=30 A/µsdVD/dt= 20V/µs
Tj= 125
°C
TYP
100
µs
PG (AV) =1W
PGM = 40W (tp = 20 µs)
IFGM = 8A (tp = 20 µs)
VRGM =5 V.
ELECTRICAL CHARACTERISTICS
THERMAL RESISTANCES
BTW 68 (N)
2/5


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