IC42S16100-5TG datasheet(6/78 Pages) ICSI

Part #	IC42S16100-5TG

Description	512K x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM

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Manufacturer	ICSI [Integrated Circuit Solution Inc]

Direct Link	http://www.icsi.com.tw

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6 / 78 page

IC42S16100

6

Integrated Circuit Solution Inc.

DR024-0D 06/25/2004

DC ELECTRICAL CHARACTERISTICS (Recommended Operation Conditions unless otherwise noted.)

Symbol Parameter

Test Condition

Speed Min.

Max.

Unit

IIL

Input Leakage Current

0V

≤ VIN ≤ VCC, with pins other than

–5

5

µA

the tested pin at 0V

IOL

Output Leakage Current

Output is disabled

–10

10

µA

0V

≤ VOUT ≤ VCC

VOH

Output High Voltage Level

IOUT = –2 mA

2.4

—

V

VOL

Output Low Voltage Level

IOUT = +2 mA

—

0.4

V

ICC1

Operating Current(1,2)

One Bank Operation,

CAS latency = 3

-5

—

150

mA

Burst Length=1

-6

—

145

mA

tRC

≥ tRC (min.)

-7

—

140

mA

IOUT = 0mA

ICC2

Precharge Standby Current

CKE

≤ VIL (MAX)tCK = tCK (MIN)—

—

2

mA

(In Power-Down Mode)

ICC3

Active Standby Current

CKE

≥ VIH (MIN)tCK = tCK (MIN)—

—5

50

mA

(In Non Power-Down Mode)

—

—6

45

mA

——7

40

mA

ICC4

Operating Current

tCK = tCK (MIN)

-5

—

150

mA

(In Burst Mode)(1)

IOUT = 0mA

-6

—

140

mA

-7

—

130

mA

ICC5

Auto-Refresh Current

tRC = tRC (MIN)

-5

—

100

mA

-6

—

90

mA

-7

—

80

mA

ICC6

Self-Refresh Current

CKE

≤ 0.2V

—

1

mA

Notes:

1. These are the values at the minimum cycle time. Since the currents are transient, these values decrease as the cycle time

increases. Also note that a bypass capacitor of at least 0.01 µF should be inserted between Vcc and GND for each

memory chip to suppress power supply voltage noise (voltage drops) due to these transient currents.

2. Icc1 and Icc4 depend on the output load.

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IC42S16100-5TG Datasheet(PDF) 6 Page - Integrated Circuit Solution Inc

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