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IRFS730A Datasheet(PDF) 2 Page - Fairchild Semiconductor |
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IRFS730A Datasheet(HTML) 2 Page - Fairchild Semiconductor |
2 / 7 page N-CHANNEL POWER MOSFET Electrical Characteristics (T C=25 unless otherwise specified) Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Characteristic Symbol Max. Units Typ. Min. Test Condition Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain(“Miller”) Charge g fs C iss C oss C rss t d(on) t r t d(off) t f Q g Q gs Q gd BV DSS BV/ T J V GS(th) R DS(on) I GSS I DSS V V/ V nA A pF ns nC -- -- -- -- -- -- -- -- -- -- -- -- -- V GS=0V,ID=250 A I D=250 A See Fig 7 V DS=5V,ID=250 A V GS=30V V GS=-30V V DS=400V V DS=320V,TC=125 V GS=10V,ID=1.95A V DS=50V,ID=1.95A V DD=200V,ID=5.5A, R G=12 See Fig 13 V DS=320V,VGS=10V, I D=5.5A See Fig 6 & Fig 12 Drain-to-Source Leakage Current V GS=0V,VDS=25V,f =1MHz See Fig 5 Source-Drain Diode Ratings and Characteristics Continuous Source Current Pulsed-Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge I S I SM V SD t rr Q rr Characteristic Symbol Max. Units Typ. Min. Test Condition -- -- -- -- -- A V ns C Integral reverse pn-diode in the MOSFET T J=25 ,I S=3.9A,VGS=0V T J=25 ,I F=5.5A di F/dt=100A/ s ∆ Ω Ω µ O 1 O 4 O 5 ΟC ∆ Ω µ µ µ µ µ ΟC ΟC ΟC O 4 O 4 O 4 O 5 O 4 ΟC IRFS730A 400 -- 2.0 -- -- -- -- -- 0.52 -- -- -- -- -- 95 43 15 18 62 22 32 4.6 16.6 -- -- 4.0 100 -100 10 100 1.0 -- 880 110 52 40 50 140 60 42 -- -- 3.44 675 -- -- -- 259 1.81 3.9 22 1.5 -- -- Notes ; Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature L=40mH, I AS=3.9A, VDD=50V, RG=27 , Starting T J =25 I SD 5.5A, di/dt 140A/ s, V DD BV DSS , Starting T J =25 Pulse Test : Pulse Width = 250 s, Duty Cycle 2% Essentially Independent of Operating Temperature < _ < _ < _ < _ O 1 O 2 O 3 O 4 O 5 Ω oC oC µ µ ©1999 Fairchild Semiconductor Corporation |
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