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K6R4008V1C-C10 Datasheet(PDF) 1 Page - Samsung semiconductor

Part # K6R4008V1C-C10
Description  512Kx8 Bit High Speed Static RAM(3.3V Operating). Operated at Commercial and Industrial Temperature Ranges.
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Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

K6R4008V1C-C10 Datasheet(HTML) 1 Page - Samsung semiconductor

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K6R4008V1C-C/C-L, K6R4008V1C-I/C-P
CMOS SRAM
PRELIMINARY
Rev 5.0
- 1 -
September 2001
3Document Title
512Kx8 Bit High Speed Static RAM(3.3V Operating).
Operated at Commercial and Industrial Temperature Ranges.
Revision History
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
RevNo.
Rev. 0.0
Rev. 1.0
Rev. 2.0
Rev. 3.0
Rev. 4.0
Rev. 5.0
Remark
Preliminary
Preliminary
Preliminary
Final
Final
Final
History
Initial release with Preliminary.
1.1 Removed Low power Version.
1.2 Removed Data Retention Characteristics.
1.3 Changed ISB1 to 20mA
Relax D.C parameters.
3.1 Delete Preliminary
3.2 Update D.C parameters and 10ns part.
Add Low Power-Ver.
Delete 20ns speed bin
Item
Previous
Current
ICC
12ns
160mA
195mA
15ns
155mA
190mA
20ns
150mA
185mA
Previous
Current
ICC
Isb
Isb1
ICC
Isb
Isb1
10ns
-
70mA
20mA
155mA
60mA
10mA
12ns
195mA
145mA
15ns
190mA
135mA
20ns
185mA
125mA
Draft Data
Feb. 12. 1999
Mar. 29. 1999
Aug. 19. 1999
Mar. 27. 2000
Apr. 24. 2000
Sep. 24. 2001


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