Schottky Barrier Diodes (SBD)

1

Publication date: April 2004

SKH00079CED

Silicon epitaxial planar type

For high frequency rectification

■ Features

• Forward current (Average) I

possible

• Optimum for high frequency rectification because of its short

• Low forward voltage V

■ Absolute Maximum Ratings T

Parameter

Symbol

Rating

Unit

Reverse voltage

40

V

Maximum peak reverse voltage

40

V

Forward current (Average)

500

mA

Non-repetitive peak forward

2A

Junction temperature

125

°C

Storage temperature

−55 to +125

°C

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Forward voltage

= 500 mA

0.55

V

Reverse current

= 35 V

100

µA

Terminal capacitance

60

pF

= I

R

= 100 mA

5

ns

= 0.1 I

= 100 Ω

■ Electrical Characteristics T

a

= 25°C ± 3°C

Bias Application Unit (N-50BU)

90%

Pulse Generator

(PG-10N)

R

Wave Form Analyzer

(SAS-8130)

R

t

t

δ = 0.05

I

I

R

10%

Input Pulse

Output Pulse

I

t

r

t

p

t

rr

V

R

I

F

t

t

A

Internal Connection

Marking Symbol: M2W

12

3

Unit: mm

1: Anode

2: N.C.

3: Cathode

EIAJ: SC-59

Mini3-G1 Package

0.40

+0.10

–0.05

2

1

3

(0.95) (0.95)

2.90

+0.20

–0.05

0.16

+0.10

–0.06

10˚

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.

2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body

and the leakage of current from the operating equipment.

 

3. Absolute frequency of input and output is 400 MHz.

Note) The part number in the parenthesis shows conventional part number.

Note) *: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)