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MAC97A6 Datasheet(PDF) 2 Page - NXP Semiconductors

Part # MAC97A6
Description  Logic level triac
Download  12 Pages
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

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Philips Semiconductors
MAC97A8; MAC97A6
Logic level triac
Product specification
Rev. 01 — 29 March 2001
2 of 12
9397 750 07917
© Philips Electronics N.V. 2001. All rights reserved.
5.
Quick reference data
6.
Limiting values
Table 2:
Quick reference data
Symbol Parameter
Conditions
Typ
Max
Unit
VDRM
repetitive peak off-state voltage
MAC97A8
MAC97A6
Tj =25to125 °C
600
V
Tj =25to125 °C
400
V
IT(RMS)
on-state current (RMS value)
full sine wave; Tlead ≤ 50 °C; Figure 5
0.6
A
ITSM
non-repetitive peak on-state current
8.0
A
Table 3:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max
Unit
VDRM
repetitive peak off-state voltage
MAC97A8
MAC97A6
Tj =25to125 °C
600
V
Tj =25to125 °C
400
V
IT(RMS)
on-state current (RMS value)
full sine wave; Tlead ≤ 50 °C; Figure 5
0.6
A
ITSM
non-repetitive peak on-state current
full sine wave; Tj =25 °C prior to surge
t=20ms
8.0
A
t = 16.7 ms
8.8
A
I2tI2t for fusing
t
= 10 ms
0.32
A2s
dIT/dt
repetitive rate of rise of on-state
current after triggering
ITM = 1.0 A; IG = 0.2 A; dIG/dt = 0.2 A/µs
T2+ G+
50
A/
µs
T2+ G
−−
50
A/
µs
T2
− G−−
50
A/
µs
T2
− G+
10
A/
µs
IGM
gate current (peak value)
t = 2
µs max
1A
VGM
gate voltage (peak value)
t = 2
µs max
5
V
PGM
gate power (peak value)
t = 2
µs max
5W
PG(AV)
average gate power
Tcase =80 °C; t = 2 µs max
0.1
W
Tstg
storage temperature
−40
+150
°C
Tj
operating junction temperature
−40
+125
°C


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