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MAC97A6 Datasheet(PDF) 2 Page - NXP Semiconductors |
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MAC97A6 Datasheet(HTML) 2 Page - NXP Semiconductors |
2 / 12 page Philips Semiconductors MAC97A8; MAC97A6 Logic level triac Product specification Rev. 01 — 29 March 2001 2 of 12 9397 750 07917 © Philips Electronics N.V. 2001. All rights reserved. 5. Quick reference data 6. Limiting values Table 2: Quick reference data Symbol Parameter Conditions Typ Max Unit VDRM repetitive peak off-state voltage MAC97A8 MAC97A6 Tj =25to125 °C − 600 V Tj =25to125 °C − 400 V IT(RMS) on-state current (RMS value) full sine wave; Tlead ≤ 50 °C; Figure 5 − 0.6 A ITSM non-repetitive peak on-state current − 8.0 A Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDRM repetitive peak off-state voltage MAC97A8 MAC97A6 Tj =25to125 °C − 600 V Tj =25to125 °C − 400 V IT(RMS) on-state current (RMS value) full sine wave; Tlead ≤ 50 °C; Figure 5 − 0.6 A ITSM non-repetitive peak on-state current full sine wave; Tj =25 °C prior to surge t=20ms − 8.0 A t = 16.7 ms − 8.8 A I2tI2t for fusing t = 10 ms − 0.32 A2s dIT/dt repetitive rate of rise of on-state current after triggering ITM = 1.0 A; IG = 0.2 A; dIG/dt = 0.2 A/µs T2+ G+ − 50 A/ µs T2+ G −− 50 A/ µs T2 − G−− 50 A/ µs T2 − G+ − 10 A/ µs IGM gate current (peak value) t = 2 µs max − 1A VGM gate voltage (peak value) t = 2 µs max 5 V PGM gate power (peak value) t = 2 µs max − 5W PG(AV) average gate power Tcase =80 °C; t = 2 µs max − 0.1 W Tstg storage temperature −40 +150 °C Tj operating junction temperature −40 +125 °C |
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