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AP2302GN Datasheet(PDF) 2 Page - Advanced Power Electronics Corp. |
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AP2302GN Datasheet(HTML) 2 Page - Advanced Power Electronics Corp. |
2 / 4 page Electrical Characteristics@Tj=25 oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 20 - - V ΔBV DSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.1 - V/℃ RDS(ON) Static Drain-Source On-Resistance 2 VGS=4.5V, ID=3.6A - - 85 mΩ VGS=2.5V, ID=3.1A - - 115 mΩ VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 0.5 - 1.2 V gfs Forward Transconductance VDS=5V, ID=3.6A - 6 - S IDSS Drain-Source Leakage Current (Tj=25 oC) VDS=20V, VGS=0V - - 1 uA Drain-Source Leakage Current (Tj=70 oC) VDS=20V ,VGS=0V - - 10 uA IGSS Gate-Source Leakage VGS=±12V - - ±100 nA Qg Total Gate Charge 2 ID=3.6A - 4.4 - nC Qgs Gate-Source Charge VDS=10V - 0.6 - nC Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 1.9 - nC td(on) Turn-on Delay Time 2 VDS=10V - 5.2 - ns tr Rise Time ID=3.6A - 37 - ns td(off) Turn-off Delay Time RG=6Ω,VGS=5V - 15 - ns tf Fall Time RD=2.8Ω - 5.7 - ns Ciss Input Capacitance VGS=0V - 145 - pF Coss Output Capacitance VDS=10V - 100 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 50 - pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units IS Continuous Source Current ( Body Diode ) VD=VG=0V , VS=1.2V - - 1 A ISM Pulsed Source Current ( Body Diode ) 1 -- 10 A VSD Forward On Voltage 2 IS=1.6A, VGS=0V - - 1.2 V Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in 2 copper pad of FR4 board ; 270℃/W when mounted on min. copper pad. AP2302GN |
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