AP2852GO datasheet(3/7 Pages) A-POWER

Part #	AP2852GO

Description	N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

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Manufacturer	A-POWER [Advanced Power Electronics Corp.]

Direct Link	http://www.a-power.com.tw

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3 / 7 page

AP2852GO

P-CH Electrical Characteristics@Tj=25

oC(unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max. Units

BVDSS

Drain-Source Breakdown Voltage

VGS=0V, ID=-250uA

-30

-

V

ΔBV

DSS/ΔTj

Breakdown Voltage Temperature Coefficient

Reference to 25℃,ID=-1mA

-

-0.02

-

V/℃

RDS(ON)

Static Drain-Source On-Resistance

2

VGS=-10V, ID=-4A

-

50

mΩ

VGS=-4.5V, ID=-2A

-

75

mΩ

VGS(th)

Gate Threshold Voltage

VDS=VGS, ID=-250uA

-1

-

-3

V

gfs

Forward Transconductance

VDS=-10V, ID=-4A

-

5

-

S

IDSS

Drain-Source Leakage Current (Tj=25

oC)

VDS=-30V, VGS=0V

-

-1

uA

Drain-Source Leakage Current (Tj=70

oC)

VDS=-24V, VGS=0V

-

-25

uA

IGSS

Gate-Source Leakage

VGS=±20V

-

±100

nA

Qg

Total Gate Charge

2

ID=-4A

-

9

15

nC

Qgs

Gate-Source Charge

VDS=-24V

-

2

-

nC

Qgd

Gate-Drain ("Miller") Charge

VGS=-4.5V

-

5

-

nC

td(on)

Turn-on Delay Time

2

VDS=-15V

-

10

-

ns

tr

Rise Time

ID=-1A

-

6

-

ns

td(off)

Turn-off Delay Time

RG=3.3Ω,VGS=-10V

-

24

-

ns

tf

Fall Time

RD=15Ω

-9

-

ns

Ciss

Input Capacitance

VGS=0V

-

570

910

pF

Coss

Output Capacitance

VDS=-25V

-

180

-

pF

Crss

Reverse Transfer Capacitance

f=1.0MHz

-

120

-

pF

Source-Drain Diode

Symbol

Parameter

Test Conditions

Min.

Typ.

Max. Units

VSD

Forward On Voltage

2

IS=-1.2A, VGS=0V

-

-1.2

V

trr

Reverse Recovery Time

IS=-4A, VGS=0V

-

22

-

ns

Qrr

Reverse Recovery Charge

dI/dt=-100A/µs

-

20

-

nC

Notes:

1.Pulse width limited by Max. junction temperature.

2.Pulse width <300us , duty cycle <2%.

3.Surface mounted on 1 in

2 copper pad of FR4 board , t <10sec ; 208℃/W when mounted on min. copper pad.

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