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AP4435D Datasheet(PDF) 4 Page - Advanced Power Electronics Corp. |
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AP4435D Datasheet(HTML) 4 Page - Advanced Power Electronics Corp. |
4 / 4 page Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform AP4435D td(on) tr td(off)tf VDS VGS 10% 90% Q VG -4.5V QGS QGD QG Charge 100 1000 10000 1 5 9 13 17 21 25 29 -V DS , Drain-to-Source Voltage (V) f=1.0MHz Ciss Coss Crss 0 2 4 6 8 10 12 0 1020 304050 Q G , Total Gate Charge (nC) I D =-9.0A V DS =-24V 0.01 0.1 1 10 100 0.1 1 10 100 -V DS , Drain-to-Source Voltage (V) 1ms 10ms 100ms 1s DC T A =25 o C Single Pulse 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) PDM Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja=90 oC/W t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse |
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