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AP4569GM Datasheet(PDF) 6 Page - Advanced Power Electronics Corp. |
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AP4569GM Datasheet(HTML) 6 Page - Advanced Power Electronics Corp. |
6 / 7 page P-Channel Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 6/7 AP4569GM 0 10 20 30 024 68 -V DS , Drain-to-Source Voltage (V) T A =25 o C - 10V - 7.0V - 5.0V - 4.5V V G = - 3.0V 0 10 20 30 024 6 8 -V DS , Drain-to-Source Voltage (V) T A = 150 o C - 10V - 7.0V - 5.0V - 4.5V V G = - 3.0V 50 80 110 140 170 24 68 10 -V GS , Gate-to-Source Voltage (V) I D =-2 A T A =25 o C 0.6 1.0 1.4 1.8 -50 0 50 100 150 T j , Junction Temperature ( o C) I D =-4 A V G = - 10V 0.3 0.7 1.1 1.5 -50 0 50 100 150 T j , Junction Temperature ( o C) 0 1 2 3 4 5 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -V SD , Source-to-Drain Voltage (V) T j =25 o C T j =150 o C |
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