Advanced Power

N-CHANNEL ENHANCEMENT MODE

Electronics Corp.

POWER MOSFET

▼

▼

▼

▼ Low On-Resistance

25V

▼

▼

▼

▼ Fast Switching

18mΩ

▼

▼

▼

▼ Simple Drive Requirement

9A

Description

Absolute Maximum Ratings

Symbol

Units

V

V

A

A

A

W

W/℃

℃

℃

Symbol

Value

Unit

Rthj-amb

Thermal Resistance Junction-ambient

3

Max.

50

℃/W

Data and specifications subject to change without notice

AP4800M

Parameter

Rating

Drain-Source Voltage

25

Gate-Source Voltage

Continuous Drain Current

3

9

Continuous Drain Current

3

7

Pulsed Drain Current

1

40

Total Power Dissipation

2.5

Linear Derating Factor

0.02

Storage Temperature Range

-55 to 150

Operating Junction Temperature Range

-55 to 150

Thermal Data

Parameter

20020430

The Advanced Power MOSFETs from APEC provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and cost-effectiveness.

The SO-8 package is universally preferred for all commercial-

industrial surface mount applications and suited for low voltage

applications such as DC/DC converters.

G

D

S

± 20

S

S

S

G

D

D

D

D

SO-8

G

D

S