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AP9563GM Datasheet(PDF) 3 Page - Advanced Power Electronics Corp. |
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AP9563GM Datasheet(HTML) 3 Page - Advanced Power Electronics Corp. |
3 / 4 page AP9563GM Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 0 10 20 30 40 50 60 70 80 90 100 02 46 8 10 12 14 -V DS , Drain-to-Source Voltage (V) T A =25 o C -10V -7.0V -5.0V -4.5V V G = -3.0 V 0 10 20 30 40 50 60 70 80 90 0 2 4 6 8 10 12 14 -V DS , Drain-to-Source Voltage (V) T A = 150 o C -10V -7.0V -5.0V -4.5V V G = -3.0 V 26 30 34 38 42 46 50 3579 11 -V GS , Gate-to-Source Voltage (V) I D =-4 A T A =25 ℃ ℃ ℃ ℃ 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 0 50 100 150 T j , Junction Temperature ( o C) I D =-6 A V G =-10V 0 1 2 3 -50 0 50 100 150 T j , Junction Temperature ( o C) 0 2 4 6 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -V SD , Source-to-Drain Voltage (V) T j =25 o C T j =150 o C |
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