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AP9922EO Datasheet(PDF) 2 Page - Advanced Power Electronics Corp. |
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AP9922EO Datasheet(HTML) 2 Page - Advanced Power Electronics Corp. |
2 / 4 page Electrical Characteristics@Tj=25 oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 20 - - V ΔBV DSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.05 - V/℃ RDS(ON) Static Drain-Source On-Resistance 2 VGS=4.5V, ID=6A - - 15 mΩ VGS=2.5V, ID=4A - - 20 mΩ VGS(th) Gate Threshold Voltage VDS=VGS, ID=1mA 0.5 - 1.2 V gfs Forward Transconductance VDS=4.5V, ID=6A - 22 - S IDSS Drain-Source Leakage Current (Tj=25 oC) VDS=20V, VGS=0V - - 10 uA Drain-Source Leakage Current (Tj=70 oC) VDS=16V ,VGS=0V - - 100 uA IGSS Gate-Source Leakage VGS=±12V - - ±10 uA Qg Total Gate Charge 2 ID=6A - 25 40 nC Qgs Gate-Source Charge VDS=16V - 3 - nC Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 9 - nC td(on) Turn-on Delay Time 2 VDS=15V - 11 - ns tr Rise Time ID=1A - 12 - ns td(off) Turn-off Delay Time RG=3.3Ω,VGS=4.5V - 47 - ns tf Fall Time RD=15Ω -23 - ns Ciss Input Capacitance VGS=0V - 1730 2770 pF Coss Output Capacitance VDS=20V - 280 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 240 - pF Rg Gate Resistance f=1.0MHz - 2.2 - Ω Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage 2 IS=0.84A,VGS=0V - - 1.2 V trr Reverse Recovery Time 2 IS=6A, VGS=0V, - 24 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 18 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in 2 copper pad of FR4 board ; 208℃/W when mounted on Min. copper pad. AP9922EO |
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