APT11GP60SA datasheet(3/6 Pages) ADPOW

Part #	APT11GP60SA

Description	POWER MOS 7 IGBT

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Manufacturer	ADPOW [Advanced Power Technology]

Direct Link	http://www.advpowertech.com

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APT11GP60K_SA

TYPICAL PERFORMANCE CURVES

V

CE, COLLECTER-TO-EMITTER VOLTAGE (V)

V

CE, COLLECTER-TO-EMITTER VOLTAGE (V)

FIGURE 1, Output Characteristics(V

GE = 15V)

FIGURE 2, Output Characteristics (V

GE = 10V)

V

GE, GATE-TO-EMITTER VOLTAGE (V)

GATE CHARGE (nC)

FIGURE 3, Transfer Characteristics

FIGURE 4, Gate Charge

V

GE, GATE-TO-EMITTER VOLTAGE (V)

T

J, Junction Temperature (°C)

FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage

FIGURE 6, On State Voltage vs Junction Temperature

T

J, JUNCTION TEMPERATURE (°C)

T

C, CASE TEMPERATURE (°C)

FIGURE 7, Breakdown Voltage vs. Junction Temperature

FIGURE 8, DC Collector Current vs Case Temperature

0

1234

0

1234

0

2

4

6

8

10

0

5

10

152025

303540

6

8

10

12

14

16

-50

-25

0

25

50

75

100

125

-50

-25

0

25

50

75

100 125

-50

-25

0

25

50

75 100 125 150

TJ = 25°C.

250µs PULSE TEST

<0.5 % DUTY CYCLE

TC=-55°C

TC=125°C

TC=25°C

VCE = 480V

VCE = 300V

VCE = 120V

VGE = 10V.

250µs PULSE TEST

<0.5 % DUTY CYCLE

VGE = 15V.

250µs PULSE TEST

<0.5 % DUTY CYCLE

VGE = 15V.

250µs PULSE TEST

<0.5 % DUTY CYCLE

IC = 11A

TJ = 25°C

TJ = -55°C

TJ = 125°C

TC=-55°C

TC=25°C

TC=125°C

250µs PULSE TEST

<0.5 % DUTY CYCLE

IC = 5.5A

IC = 11A

IC = 22A

IC = 11A

IC = 5.5A

40

35

30

25

20

15

10

5

0

80

70

60

50

40

30

20

10

0

3.5

3.0

2.5

2.0

1.5

1.0

0.5

0

1.10

1.05

1.00

0.95

0.90

40

35

30

25

20

15

10

5

0

16

14

12

10

8

6

4

2

0

3.0

2.5

2.0

1.5

1.0

0.5

0

60

50

40

30

20

10

0

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