APT15GN120BDQ1(G)

1 Repetitive Rating: Pulse width limited by maximum junction temperature.

2 For Combi devices, I

3 See MIL-STD-750 Method 3471.

4 E

adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode.

5 E

loss. (See Figures 21, 22.)

6 E

7 R

APT Reserves the right to change, without notice, the specifications and information contained herein.

THERMAL AND MECHANICAL CHARACTERISTICS

UNIT

°C/W

gm

MIN

TYP

MAX

.64

1.18

5.9

Characteristic

Junction to Case

(IGBT)

Junction to Case

(DIODE)

Package Weight

Symbol

W

T

DYNAMIC CHARACTERISTICS

Symbol

C

ies

C

oes

C

res

V

GEP

Q

g

Q

ge

Q

gc

SSOA

t

d(on)

t

r

t

d(off)

t

f

E

on1

E

on2

E

off

t

d(on)

t

r

t

d(off)

t

f

E

on1

E

on2

E

off

Test Conditions

Capacitance

V

f = 1 MHz

Gate Charge

V

V

I

T

7

, V

15V, L = 100µH,V

Inductive Switching (25°C)

V

V

I

R

7

T

Inductive Switching (125°C)

V

V

I

R

7

T

Characteristic

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Gate-to-Emitter Plateau Voltage

Gate-Emitter Charge

Gate-Collector ("Miller") Charge

Switching Safe Operating Area

Turn-on Delay Time

Current Rise Time

Turn-off Delay Time

Current Fall Time

Turn-on Delay Time

Current Rise Time

Turn-off Delay Time

Current Fall Time

MIN

TYP

MAX

1200

65

50

9.0

90

5

55

45

10

9

150

110

410

730

950

10

9

170

185

475

1310

1300

UNIT

pF

V

nC

A

ns

ns