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APT15GT120BRDQ1 Datasheet(PDF) 1 Page - Advanced Power Technology |
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APT15GT120BRDQ1 Datasheet(HTML) 1 Page - Advanced Power Technology |
1 / 9 page APT15GT120BRDQ1(G) TYPICAL PERFORMANCE CURVES MAXIMUM RATINGS All Ratings: T C = 25°C unless otherwise specified. STATIC ELECTRICAL CHARACTERISTICS Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (V GE = 0V, I C = 1mA) Gate Threshold Voltage (V CE = VGE, I C = 0.6mA, Tj = 25°C) Collector-Emitter On Voltage (V GE = 15V, IC = 15A, Tj = 25°C) Collector-Emitter On Voltage (V GE = 15V, IC = 15A, Tj = 125°C) Collector Cut-off Current (V CE = 1200V, VGE = 0V, Tj = 25°C) 2 Collector Cut-off Current (V CE = 1200V, VGE = 0V, Tj = 125°C) 2 Gate-Emitter Leakage Current (V GE = ±20V) Symbol V (BR)CES V GE(TH) V CE(ON) I CES I GES Units Volts µA nA Symbol V CES V GE I C1 I C2 I CM SSOA P D T J,TSTG T L APT15GT120BRDQ1(G) 1200 ±30 36 18 45 45A @ 960V 250 -55 to 150 300 UNIT Volts Amps Watts °C Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current @ T C = 25°C Continuous Collector Current @ T C = 110°C Pulsed Collector Current 1 @ T C = 150°C Switching Safe Operating Area @ T J = 150°C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. APT Website - http://www.advancedpower.com CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. MIN TYP MAX 1200 4.5 5.5 6.5 2.5 3.0 3.6 3.8 200 TBD 480 1200V APT15GT120BRDQ1 APT15GT120BRDQ1G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. ® TO-2 47 G C E C E G The Thunderblot IGBT® is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT® offers superior ruggedness and ultrafast switching speed. • Low Forward Voltage Drop • High Freq. Switching to 50KHz • Low Tail Current • Ultra Low Leakage Current • RBSOA and SCSOA Rated Thunderbolt IGBT® |
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