APT15GT120BRDQ1(G)

1 Repetitive Rating: Pulse width limited by maximum junction temperature.

2 For Combi devices, I

3 See MIL-STD-750 Method 3471.

4 E

adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode.

5 E

loss. (See Figures 21, 22.)

6 E

APT Reserves the right to change, without notice, the specifications and information contained herein.

THERMAL AND MECHANICAL CHARACTERISTICS

UNIT

°C/W

gm

MIN

TYP

MAX

.50

1.18

5.9

Characteristic

Junction to Case

(IGBT)

Junction to Case

(DIODE)

Package Weight

Symbol

W

T

DYNAMIC CHARACTERISTICS

Symbol

C

ies

C

oes

C

res

V

GEP

Q

g

Q

ge

Q

gc

SSOA

t

d(on)

t

r

t

d(off)

t

f

E

on1

E

on2

E

off

t

d(on)

t

r

t

d(off)

t

f

E

on1

E

on2

E

off

Test Conditions

Capacitance

V

f = 1 MHz

Gate Charge

V

V

I

T

15V, L = 100µH,V

Inductive Switching (25°C)

V

V

I

R

T

Inductive Switching (125°C)

V

V

I

R

T

Characteristic

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Gate-to-Emitter Plateau Voltage

Gate-Emitter Charge

Gate-Collector ("Miller") Charge

Switching Safe Operating Area

Turn-on Delay Time

Current Rise Time

Turn-off Delay Time

Current Fall Time

Turn-on Delay Time

Current Rise Time

Turn-off Delay Time

Current Fall Time

MIN

TYP

MAX

1070

100

65

10

105

10

60

45

10

11

85

35

585

800

260

10

11

95

42

590

1440

340

UNIT

pF

V

nC

A

ns

ns