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APT30GN60BDQ2 Datasheet(PDF) 2 Page - Advanced Power Technology |
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APT30GN60BDQ2 Datasheet(HTML) 2 Page - Advanced Power Technology |
2 / 9 page APT30GN60BDQ2(G) DYNAMIC CHARACTERISTICS 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, I ces includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 4 E on1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode. 5 E on2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 E off is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) 7 R G is external gate resistance, not including RGint nor gate driver impedance. (MIC4452) APT Reserves the right to change, without notice, the specifications and information contained herein. THERMAL AND MECHANICAL CHARACTERISTICS UNIT °C/W gm MIN TYP MAX .74 .67 5.9 Characteristic Junction to Case (IGBT) Junction to Case (DIODE) Package Weight Symbol RθJC RθJC W T DYNAMIC CHARACTERISTICS Symbol C ies C oes C res V GEP Q g Q ge Q gc SSOA SCSOA t d(on) t r t d(off) t f E on1 E on2 E off t d(on) t r t d(off) t f E on1 E on2 E off Test Conditions Capacitance V GE = 0V, VCE = 25V f = 1 MHz Gate Charge V GE = 15V V CE = 300V I C = 30A T J = 150°C, RG = 4.3Ω 7 , V GE = 15V, L = 100µH,V CE = 600V VCC = 360V, VGE = 15V, T J = 150°C, RG = 4.3Ω 7 Inductive Switching (25°C) V CC = 400V V GE = 15V I C = 30A R G = 4.3Ω 7 T J = +25°C Inductive Switching (125°C) V CC = 400V V GE = 15V I C = 30A R G = 4.3Ω 7 T J = +125°C Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge 3 Gate-Emitter Charge Gate-Collector ("Miller") Charge Switching Safe Operating Area Short Circuit Safe Operating Area Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy 4 Turn-on Switching Energy (Diode) 5 Turn-off Switching Energy 6 Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy 4 4 Turn-on Switching Energy (Diode) 55 Turn-off Switching Energy 66 MIN TYP MAX 1750 70 50 9.0 165 10 90 75 6 12 14 155 55 525 565 700 12 14 180 75 555 950 895 UNIT pF V nC A µs ns µJ ns µJ |
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