APT33GF120B2_LRDQ2(G)

TYPICAL PERFORMANCE CURVES

MAXIMUM RATINGS

All Ratings: T

STATIC ELECTRICAL CHARACTERISTICS

Characteristic / Test Conditions

Collector-Emitter Breakdown Voltage (V

Gate Threshold Voltage (V

Collector-Emitter On Voltage (V

Collector-Emitter On Voltage (V

Collector Cut-off Current (V

2

Collector Cut-off Current (V

2

Gate-Emitter Leakage Current (V

Symbol

V

(BR)CES

V

GE(TH)

V

CE(ON)

I

CES

I

GES

Units

Volts

µA

nA

Symbol

V

CES

V

GE

I

C1

I

C2

I

CM

SSOA

P

D

T

T

L

APT33GF120B2_LRDQ2(G)

1200

±30

64

30

75

75A @ 1200V

357

-55 to 150

300

UNIT

Volts

Amps

Watts

°C

Parameter

Collector-Emitter Voltage

Gate-Emitter Voltage

Continuous Collector Current @ T

Continuous Collector Current @ T

Switching Safe Operating Area @ T

Total Power Dissipation

Operating and Storage Junction Temperature Range

Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.

APT Website - http://www.advancedpower.com

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

MIN

TYP

MAX

1200

4.5

5.5

6.5

2.0

2.5

3.0

3.1

100

6000

±120

The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch through

technology, the Fast IGBT combined with an APT free wheeling Ultra Fast Recovery Epi-

taxial Diode (FRED) offers superior ruggedness and fast switching speed.

• Low Forward Voltage Drop

• High Freq. Switching to 20KHz

• RBSOA and SCSOA Rated

• Ultra Low Leakage Current

• Ultrafast Soft Recovery Anti-parallel Diode

FAST IGBT & FRED

®

1200V

APT33GF120B2RDQ2

APT33GF120LRDQ2

APT33GF120B2RDQ2G* APT33GF120LRDQ2G*

*G Denotes RoHS Compliant, Pb Free Terminal Finish.

C

E

G

(L)

(B2)

TO-264