Characteristic / Test Conditions

Drain-Source Breakdown Voltage (V

GS

= 0V, I

D

= 250µA)

DS

> I

D(on)

x R

DS(on)

Max, V

GS

= 10V)

(V

GS

= 10V, 8A)

Zero Gate Voltage Drain Current (V

DS

= 600V, V

GS

= 0V)

Zero Gate Voltage Drain Current (V

DS

= 480V, V

GS

= 0V, T

C

= 125°C)

Gate-Source Leakage Current (V

GS

= ±30V, V

DS

= 0V)

Gate Threshold Voltage (V

DS

= V

GS

, I

D

= 1.0mA)

MAXIMUM RATINGS

Symbol

V

DSS

I

D

I

DM

V

GS

V

GSM

P

D

T

J

,T

STG

T

L

I

AR

E

AR

E

AS

Parameter

Drain-Source Voltage

Pulsed Drain Current

1

Gate-Source Voltage Continuous

Gate-Source Voltage Transient

Linear Derating Factor

Operating and Storage Junction Temperature Range

Lead Temperature: 0.063" from Case for 10 Sec.

Avalanche Current

Repetitive Avalanche Energy

1

Single Pulse Avalanche Energy

4

UNIT

Volts

Amps

Volts

Watts

W/°C

°C

Amps

mJ

STATIC ELECTRICAL CHARACTERISTICS

Symbol

BV

DSS

I

D(on)

R

DS(on)

I

DSS

I

GSS

V

GS(th)

UNIT

Volts

Amps

Ohms

µA

nA

Volts

MIN

TYP

MAX

600

16

0.40

25

250

±100

24

APT6040BVR

600

16

64

±30

±40

250

2

-55 to 150

300

16

30

960

mode power MOSFETs. This new technology minimizes the JFET effect,

also achieves faster switching speeds through optimized gate layout.

• Faster Switching

• Avalanche Energy Rated

• Lower Leakage

• Popular TO-247 Package

G

D

S

POWER MOS V

®

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

APT Website - http://www.advancedpower.com

APT6040BVR

APT6040SVR

600V 16A 0.400

Ω

Ω

Ω

Ω

Ω

TO-247

BVR

SVR