 |
Electronic Components Datasheet Search |
|
|
Electronic Components Datasheet Search |
|
AM29LV640MB100 Datasheet(PDF) 4 Page - SPANSION |
|
||||||||||||||||||||||||||||||
AM29LV640MB100 Datasheet(HTML) 4 Page - SPANSION |
|
|
4 / 66 page  2 Am29LV640MT/B February 12, 2004 ADV ANCE I N FO RMAT I O N GENERAL DESCRIPTION The Am29LV640MT/B is a 64 Mbit, 3.0 volt single power supply flash memory device organized as 4,194,304 words or 8,388,608 bytes. The device has an 8-bit/16-bit bus and can be programmed either in the host system or in standard EPROM programmers. An access time of 90, 100, 110, or 120 ns is available. Note that each access time has a specific operating voltage range (V CC) and an I/O voltage range (VIO), as specified in the Product Selector Guide and the Order- ing Information sections. The device is offered in a 48-pin TSOP, 63-ball Fine-pitch BGA or 64-ball Forti- fied BGA package. Each device has separate chip en- able (CE#), write enable (WE#) and output enable (OE#) controls. Each device requires only a single 3.0 volt power supply for both read and write functions. In addition to a V CC input, a high-voltage accelerated program (ACC) function provides shorter programming times through increased current on the WP#/ACC input. This feature is intended to facilitate factory throughput dur- ing system production, but may also be used in the field if desired. The device is entirely command set compatible with the JEDEC single-power-supply Flash standard. Commands are written to the device using standard microprocessor write timing. Write cycles also inter- nally latch addresses and data needed for the pro- gramming and erase operations. The sector erase architecture allows memory sec- tors to be erased and reprogrammed without affecting the data contents of other sectors. The device is fully erased when shipped from the factory. Device programming and erasure are initiated through command sequences. Once a program or erase oper- ation has begun, the host system need only poll the DQ7 (Data# Polling) or DQ6 (toggle) status bits or monitor the Ready/Busy# (RY/BY#) output to deter- mine whether the operation is complete. To facilitate programming, an Unlock Bypass mode reduces com- mand sequence overhead by requiring only two write cycles to program data instead of four. Hardware data protection measures include a low V CC detector that automatically inhibits write opera- tions during power transitions. The hardware sector protection feature disables both program and erase operations in any combination of sectors of memory. This can be achieved in-system or via programming equipment. The Erase Suspend/Erase Resume feature allows the host system to pause an erase operation in a given sector to read or program any other sector and then complete the erase operation. The Program Sus- pend/Program Resume feature enables the host sys- tem to pause a program operation in a given sector to read any other sector and then complete the program operation. The hardware RESET# pin terminates any operation in progress and resets the device, after which it is then ready for a new operation. The RESET# pin may be tied to the system reset circuitry. A system reset would thus also reset the device, enabling the host system to read boot-up firmware from the Flash memory device. The device reduce s power co ns umption in th e standby mode when it detects specific voltage levels on CE# and RESET#, or when addresses have been stable for a specified period of time. The Write Protect (WP#) feature protects the top or bottom two sectors by asserting a logic low on the WP#/ACC pin. The protected sector will still be pro- tected even during accelerated programming. The SecSi ™ (Secured Silicon) Sector provides a 128-word/256-byte area for code or data that can be permanently protected. Once this sector is protected, no further changes within the sector can occur. AMD MirrorBit flash technology combines years of Flash memory manufacturing experience to produce the highest levels of quality, reliability and cost effec- tiveness. The device electrically erases all bits within a sector simultaneously via hot-hole assisted erase. The data is programmed using hot electron injection. |
Similar Part No. - AM29LV640MB100 |
|
Similar Description - AM29LV640MB100 |
|
|
Link URL |
| Privacy Policy |
| ALLDATASHEET.NET |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
English ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
