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APTGS10X120BTP2 Datasheet(PDF) 2 Page - Advanced Power Technology |
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APTGS10X120BTP2 Datasheet(HTML) 2 Page - Advanced Power Technology |
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2 / 4 page  APTGS10X120RTP2 APTGS10X120BTP2 APT website – http://www.advancedpower.com 2 - 4 IGBT & Diode Brake (only for APTGS10X120BTP2) Absolute maximum ratings Symbol Parameter Max ratings Unit VCES Collector - Emitter Breakdown Voltage 1200 V TC = 25°C 20 IC Continuous Collector Current TC = 80°C 10 ICM Pulsed Collector Current TC = 25°C 20 A VGE Gate – Emitter Voltage ±20 V PD Maximum Power Dissipation TC = 25°C 100 W IF DC Forward Current TC = 80°C 10 A IGBT & Diode Inverter Absolute maximum ratings Symbol Parameter Max ratings Unit VCES Collector - Emitter Breakdown Voltage 1200 V TC = 25°C 20 IC Continuous Collector Current TC = 80°C 10 ICM Pulsed Collector Current TC = 25°C 25 A VGE Gate – Emitter Voltage ±20 V PD Maximum Power Dissipation TC = 25°C 100 W SCSOA Short circuit Safe Operating Area Tj = 125°C 45A @ 720V IF DC Forward Current TC = 80°C 10 IFSM Surge Forward Current tp = 1ms TC = 80°C 20 A 2. Electrical Characteristics Diodes Rectifier Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit IR Reverse Current VR = 1600V Tj = 150°C 2 mA IF = 30A Tj = 25°C 1.3 1.5 VF Forward Voltage IF = 10A Tj = 150°C 0.9 0.95 V RthJC Junction to Case 1 °C/W IGBT Brake & Diode (only for APTGS10X120BTP2) Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Tj = 25°C 0.5 500 µA ICES Zero Gate Voltage Collector Current VGE = 0V VCE = 1200V Tj = 125°C 0.8 mA Tj = 25°C 2.4 2.85 VCE(on) Collector Emitter on Voltage VGE = 15V IC = 10A Tj = 125°C 2.75 V VGE(th) Gate Threshold Voltage VGE = VCE , IC = 0.35mA 4.5 5.5 6.5 V IGES Gate – Emitter Leakage Current VGE = 20V, VCE = 0V 300 nA Cies Input Capacitance VGE = 0V, VCE = 25V f = 1MHz 600 pF Tj = 25°C 2.2 2.55 VF Forward Voltage VGE = 0V IF = 10A Tj = 125°C 2.1 V IGBT 1.2 RthJC Junction to Case Diode 2.3 °C/W |
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