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SENSITRON
SEMICONDUCTOR
TECHNICAL DATA, PROVISIONAL DATA ONLY
DATA SHEET 4129, Rev. B
HERMETIC SILICON CARBIDE RECTIFIER
DESCRIPTION: A 1200-VOLT, 5 AMP POWER SILICON CARBIDE RECTIFIER IN A CERAMIC
HERMETIC SHD-3 HIGH PROFILE PACKAGE
FEATURES:
• NO RECOVERY TIME OR REVERSE RECOVERY LOSSES
• NO TEMPERATURE INFLUENCE ON SWITCHING BEHAVIOR
MAXIMUM RATINGS
ALL RATINGS ARE @ TC = 25
°C UNLESS OTHERWISE SPECIFIED.
RATING
SYMBOL
MAX.
UNITS
PEAK INVERSE VOLTAGE
PIV
1200
Volts
MAXIMUM DC OUTPUT CURRENT
IO
5
Amps
MAXIMUM REPETITIVE FORWARD SURGE CURRENT
(t = 8.3ms, Sine)
IFRM
30
Amps
MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT
(t = 10
µs, pulse)
IFSM
100
Amps
MAXIMUM JUNCTION CAPACITANCE (Vr =5V)
CT
450
pF
MAXIMUM POWER DISSIPATION
Pd
15
W
MAXIMUM THERMAL RESISTANCE (Junction to Case)
RθJC
2.40
°C/W
MAXIMUM OPERATING AND STORAGE TEMPERATURE RANGE
Top, Tstg
-55 to
+200
°C
ELECTRICAL CHARACTERISTICS
CHARACTERISTIC
TYP
MAX.
UNITS
MAXIMUM FORWARD VOLTAGE DROP If = 5 A, TJ=25 °C
TJ=175 °C
1.65
2.55
1.80
3.00
Volts
MAXIMUM REVERSE CURRENT PIV = 1200V,
TJ = 25 °C
TJ = 175 °C
0.05
0.10
0.40
2.00
mA
TOTAL CAPACITIVE CHARGE (VR=1200V, IF=5A, di/dt=500A/µs and
TJ=25°C) QC
28
N/A
nC
SHD674052
SHD674052B
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