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APTGT75X120RTP3 Datasheet(PDF) 2 Page - Advanced Power Technology |
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APTGT75X120RTP3 Datasheet(HTML) 2 Page - Advanced Power Technology |
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2 / 4 page  APTGT75X120RTP3 APTGT75X120BTP3 APT website – http://www.advancedpower.com 2 - 4 IGBT & Diode Brake (only for APTGT75X120BTP3) Absolute maximum ratings Symbol Parameter Max ratings Unit VCES Collector - Emitter Breakdown Voltage 1200 V TC = 25°C 60 IC Continuous Collector Current TC = 80°C 50 ICM Pulsed Collector Current TC = 25°C 100 A VGE Gate – Emitter Voltage ±20 V PD Maximum Power Dissipation TC = 25°C 200 W IF DC Forward Current TC = 80°C 25 A IGBT & Diode Inverter Absolute maximum ratings Symbol Parameter Max ratings Unit VCES Collector - Emitter Breakdown Voltage 1200 V TC = 25°C 105 IC Continuous Collector Current TC = 80°C 75 ICM Pulsed Collector Current TC = 25°C 150 A VGE Gate – Emitter Voltage ±20 V PD Maximum Power Dissipation TC = 25°C 350 W RBSOA Reverse Bias Save Operating Area Tj = 125°C 150A @ 1100V IF DC Forward Current TC = 80°C 75 IFRM Repetitive Peak Forward Current tp = 1ms 150 A 2. Electrical Characteristics Diodes Rectifier Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit IR Reverse Current VR = 1600V Tj = 150°C 3 mA VF Forward Voltage IF = 75A Tj = 150°C 1.2 V RthJC Junction to Case 0.65 °C/W IGBT Brake & Diode (only for APTGT75X120BTP3) Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit ICES Zero Gate Voltage Collector Current VGE = 0V, VCE = 1200V 400 µA Tj = 25°C 1.4 1.7 2.1 VCE(on) Collector Emitter on Voltage VGE = 15V IC = 50A Tj = 125°C 2.0 V VGE(th) Gate Threshold Voltage VGE = VCE , IC = 2mA 5.0 5.8 6.5 V IGES Gate – Emitter Leakage Current VGE = 20V, VCE = 0V 600 nA Cies Input Capacitance 3600 Coes Output Capacitance 188 Cres Reverse Transfer Capacitance VGE = 0V, VCE = 25V f = 1MHz 163 pF Tj = 25°C 1.6 VF Forward Voltage VGE = 0V IF = 25A Tj = 125°C 1.8 V IGBT 0.6 RthJC Junction to Case Diode 1.2 °C/W |
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