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APTGT200DA170D3 Datasheet(PDF) 2 Page - Advanced Power Technology |
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APTGT200DA170D3 Datasheet(HTML) 2 Page - Advanced Power Technology |
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2 / 3 page  APTGT200DA170D3 APT website – http://www.advancedpower.com 2 - 3 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit BVCES Collector - Emitter Breakdown Voltage VGE = 0V, IC = 7mA 1700 V ICES Zero Gate Voltage Collector Current VGE = 0V, VCE = 1700V 5 mA Tj = 25°C 2.0 2.4 VCE(on) Collector Emitter on Voltage VGE = 15V IC = 200A Tj = 125°C 2.4 V VGE(th) Gate Threshold Voltage VGE = VCE , IC = 8 mA 5.2 5.8 6.4 V IGES Gate – Emitter Leakage Current VGE = 20V, VCE = 0V 400 nA Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Cies Input Capacitance 17 Cres Reverse Transfer Capacitance VGE = 0V, VCE = 25V f = 1MHz 0.6 nF Td(on) Turn-on Delay Time 250 Tr Rise Time 100 Td(off) Turn-off Delay Time 850 Tf Fall Time Inductive Switching (25°C) VGE = ±15V VBus = 900V IC = 200A RG = 6.8Ω 120 ns Td(on) Turn-on Delay Time 300 Tr Rise Time 100 Td(off) Turn-off Delay Time 1000 Tf Fall Time 200 ns Eoff Turn Off Energy Inductive Switching (125°C) VGE = ±15V VBus = 900V IC = 200A RG = 6.8Ω 65 mJ Reverse diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Tj = 25°C 1.8 2.2 VF Diode Forward Voltage IF = 200A VGE = 0V Tj = 125°C 1.9 V Tj = 25°C 25 Er Reverse Recovery Energy IF = 200A VR = 900V di/dt =900A/µs Tj = 125°C 50 mJ Tj = 25°C 50 Qrr Reverse Recovery Charge IF = 200A VR = 900V di/dt =900A/µs Tj = 125°C 85 µC Thermal and package characteristics Symbol Characteristic Min Typ Max Unit IGBT 0.10 RthJC Junction to Case Diode 0.16 °C/W VISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 3500 V TJ Operating junction temperature range -40 150 TSTG Storage Temperature Range -40 125 TC Operating Case Temperature -40 125 °C For terminals M6 3 5 Torque Mounting torque To Heatsink M6 3 5 N.m Wt Package Weight 380 g |
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