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APTM20SKM08T Datasheet(PDF) 2 Page - Advanced Power Technology |
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APTM20SKM08T Datasheet(HTML) 2 Page - Advanced Power Technology |
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2 / 6 page  APTM20SKM08T APT website – http://www.advancedpower.com 2 – 6 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit BVDSS Drain - Source Breakdown Voltage VGS = 0V, ID = 375µA 200 V VGS = 0V,VDS = 200V Tj = 25°C 150 IDSS Zero Gate Voltage Drain Current VGS = 0V,VDS = 160V Tj = 125°C 750 µA RDS(on) Drain – Source on Resistance VGS = 10V, ID = 104A 8 m W VGS(th) Gate Threshold Voltage VGS = VDS, ID = 5mA 3 5 V IGSS Gate – Source Leakage Current VGS = ±30 V, VDS = 0V ±150 nA Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Ciss Input Capacitance 14.4 Coss Output Capacitance 4.66 Crss Reverse Transfer Capacitance VGS = 0V VDS = 25V f = 1MHz 0.29 nF Qg Total gate Charge 280 Qgs Gate – Source Charge 106 Qgd Gate – Drain Charge VGS = 10V VBus = 100V ID = 208A 134 nC Td(on) Turn-on Delay Time 32 Tr Rise Time 64 Td(off) Turn-off Delay Time 88 Tf Fall Time Inductive switching @ 125°C VGS = 15V VBus = 133V ID = 208A RG = 2.5 W 116 ns Eon Turn-on Switching Energy u 1698 Eoff Turn-off Switching Energy v Inductive switching @ 25°C VGS = 15V, VBus = 133V ID = 208A, RG = 2.5Ω 1858 µJ Eon Turn-on Switching Energy u 1872 Eoff Turn-off Switching Energy v Inductive switching @ 125°C VGS = 15V, VBus = 133V ID = 208A, RG = 2.5Ω 1972 µJ Diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit IF(AV) Maximum Average Forward Current 50% duty cycle Tc = 85°C 180 A IF = 180A 1.1 IF = 360A 1.4 VF Diode Forward Voltage IF = 180A Tj = 125°C 0.9 V Tj = 25°C 31 trr Reverse Recovery Time IF = 180A VR = 133V di/dt = 600A/µs Tj = 125°C 60 ns Tj = 25°C 180 Qrr Reverse Recovery Charge IF = 180A VR = 133V di/dt = 600A/µs Tj = 125°C 750 nC u Eon includes diode reverse recovery. v In accordance with JEDEC standard JESD24-1. |
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