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APTM50HM75SCT Datasheet(PDF) 4 Page - Advanced Power Technology

Part # APTM50HM75SCT
Description  Full bridge Series & SiC parallel diodes MOSFET Power Module
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Manufacturer  ADPOW [Advanced Power Technology]
Direct Link  http://www.advpowertech.com
Logo ADPOW - Advanced Power Technology

APTM50HM75SCT Datasheet(HTML) 4 Page - Advanced Power Technology

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APTM50HM75SCT
APT website – http://www.advancedpower.com
4 – 7
Typical MOSFET Performance Curve
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
5.5V
6V
6.5V
7V
7.5V
8V
0
20
40
60
80
100
120
140
160
180
0
5
10
15
20
25
VDS, Drain to Source Voltage (V)
VGS=10&15V
Low Voltage Output Characteristics
Transfert Characteristics
TJ=-55°C
TJ=25°C
TJ=125°C
0
20
40
60
80
100
120
012345678
VGS, Gate to Source Voltage (V)
VDS > ID(on)xRDS(on)MAX
250µs pulse test @ < 0.5 duty cycle
RDS(on) vs Drain Current
VGS=10V
VGS=20V
0.80
0.85
0.90
0.95
1.00
1.05
1.10
1.15
1.20
0
20406080
100
ID, Drain Current (A)
Normalized to
VGS=10V @ 23A
0
10
20
30
40
50
25
50
75
100
125
150
TC, Case Temperature (°C)
DC Drain Current vs Case Temperature


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