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APTM50UM19S Datasheet(PDF) 2 Page - Advanced Power Technology |
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APTM50UM19S Datasheet(HTML) 2 Page - Advanced Power Technology |
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2 / 7 page  APTM50UM19S APT website – http://www.advancedpower.com 2 – 7 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit BVDSS Drain - Source Breakdown Voltage VGS = 0V, ID = 500µA 500 V VGS = 0V,VDS= 500V Tj = 25°C 200 IDSS Zero Gate Voltage Drain Current VGS = 0V,VDS= 400V Tj = 125°C 1000 µA RDS(on) Drain – Source on Resistance VGS = 10V, ID = 81.5A 19 m W VGS(th) Gate Threshold Voltage VGS = VDS, ID = 10mA 3 5 V IGSS Gate – Source Leakage Current VGS = ±30 V, VDS = 0V ±200 nA Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Ciss Input Capacitance 22.4 Coss Output Capacitance 4.8 Crss Reverse Transfer Capacitance VGS = 0V VDS = 25V f = 1MHz 0.36 nF Qg Total gate Charge 492 Qgs Gate – Source Charge 132 Qgd Gate – Drain Charge VGS = 10V VBus = 250V ID = 163A 260 nC Td(on) Turn-on Delay Time 18 Tr Rise Time 35 Td(off) Turn-off Delay Time 87 Tf Fall Time Inductive switching @ 125°C VGS = 15V VBus = 333V ID = 163A RG = 1 W 77 ns Eon Turn-on Switching Energy u 3020 Eoff Turn-off Switching Energy v Inductive switching @ 25°C VGS = 15V, VBus = 333V ID = 163A, RG = 1Ω 2904 µJ Eon Turn-on Switching Energy u 4964 Eoff Turn-off Switching Energy v Inductive switching @ 125°C VGS = 15V, VBus = 333V ID = 163A, RG = 1Ω 3384 µJ u Eon includes diode reverse recovery. v In accordance with JEDEC standard JESD24-1. Series diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit IF(AV) Maximum Average Forward Current 50% duty cycle Tc = 85°C 120 A IF = 120A 1.1 1.15 IF = 240A 1.4 VF Diode Forward Voltage IF = 120A Tj = 125°C 0.9 V Tj = 25°C 31 trr Reverse Recovery Time IF = 120A VR = 133V di/dt = 400A/µs Tj = 125°C 60 ns Tj = 25°C 120 Qrr Reverse Recovery Charge IF = 120A VR = 133V di/dt = 400A/µs Tj = 125°C 500 nC |
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