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APTGT50DU120T Datasheet(PDF) 2 Page - Advanced Power Technology |
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APTGT50DU120T Datasheet(HTML) 2 Page - Advanced Power Technology |
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2 / 5 page  APTGT50DU120T APT website – http://www.advancedpower.com 2 - 5 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit ICES Zero Gate Voltage Collector Current VGE = 0V, VCE = 1200V 250 µA Tj = 25°C 1.7 2.1 VCE(sat) Collector Emitter Saturation Voltage VGE = 15V IC = 50A Tj = 125°C 2.0 V VGE(th) Gate Threshold Voltage VGE = VCE, IC = 2mA 5.0 5.8 6.5 V IGES Gate – Emitter Leakage Current VGE = 20V, VCE = 0V 400 nA Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Cies Input Capacitance 3600 Coes Output Capacitance 190 Cres Reverse Transfer Capacitance VGE = 0V VCE = 25V f = 1MHz 160 pF Td(on) Turn-on Delay Time 90 Tr Rise Time 30 Td(off) Turn-off Delay Time 420 Tf Fall Time Inductive Switching (25°C) VGE = 15V VBus = 600V IC = 50A RG = 18 Ω 70 ns Td(on) Turn-on Delay Time 90 Tr Rise Time 50 Td(off) Turn-off Delay Time 520 Tf Fall Time 90 ns Eon Turn-on Switching Energy 5 Eoff Turn-off Switching Energy Inductive Switching (125°C) VGE = 15V VBus = 600V IC = 50A RG = 18 Ω 5.5 mJ Reverse diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit VRRM Maximum Peak Repetitive Reverse Voltage 1200 V Tj = 25°C 350 IRM Maximum Reverse Leakage Current VR=1200V Tj = 125°C 600 µA IF(AV) Maximum Average Forward Current 50% duty cycle Tc = 80°C 50 A Tj = 25°C 1.4 1.9 VF Diode Forward Voltage IF = 50A Tj = 125°C 1.3 V Tj = 25°C 150 trr Reverse Recovery Time Tj = 125°C 250 ns Tj = 25°C 4.5 Qrr Reverse Recovery Charge IF = 50A VR = 600V di/dt =2000A/µs Tj = 125°C 9 µC |
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