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APTGT100H60T3 Datasheet(PDF) 5 Page - Advanced Power Technology |
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APTGT100H60T3 Datasheet(HTML) 5 Page - Advanced Power Technology |
5 / 5 page APTGT100H60T3 APT website – http://www.advancedpower.com 5 - 5 Forward Characteristic of diode TJ=25°C TJ=125°C TJ=150°C 0 25 50 75 100 125 150 175 200 0 0.4 0.8 1.2 1.6 2 2.4 VF (V) Hard switching ZCS ZVS 0 20 40 60 80 100 120 0 255075 100 125 150 IC (A) VCE=300V D=50% RG=10Ω TJ=150°C Tc=85°C Operating Frequency vs Collector Current maximum Effective Transient Thermal Impedance, Junction to Pulse Duration 0.9 0.7 0.5 0.3 0.1 0.05 Single Pulse 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.00001 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration in Seconds Diode APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. |
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