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APTGT600DU60 Datasheet(PDF) 2 Page - Advanced Power Technology |
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APTGT600DU60 Datasheet(HTML) 2 Page - Advanced Power Technology |
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2 / 5 page  APTGT600DU60 APT website – http://www.advancedpower.com 2 - 5 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit ICES Zero Gate Voltage Collector Current VGE = 0V, VCE = 600V 750 µA Tj = 25°C 1.4 1.8 VCE(sat) Collector Emitter Saturation Voltage VGE =15V IC = 600A Tj = 150°C 1.5 V VGE(th) Gate Threshold Voltage VGE = VCE, IC = 2mA 5.0 5.8 6.5 V IGES Gate – Emitter Leakage Current VGE = 20V, VCE = 0V 800 nA Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Cies Input Capacitance 49 Coes Output Capacitance 3.1 Cres Reverse Transfer Capacitance VGE = 0V VCE = 25V f = 1MHz 1.5 nF Td(on) Turn-on Delay Time 130 Tr Rise Time 55 Td(off) Turn-off Delay Time 250 Tf Fall Time Inductive Switching (25°C) VGE = ±15V VBus = 300V IC = 600A RG = 2Ω 60 ns Td(on) Turn-on Delay Time 145 Tr Rise Time 60 Td(off) Turn-off Delay Time 320 Tf Fall Time 80 ns Eon Turn on Energy 10.5 Eoff Turn off Energy Inductive Switching (150°C) VGE = ±15V VBus = 300V IC = 600A RG = 2Ω 21 mJ Reverse diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit VRRM Maximum Peak Repetitive Reverse Voltage 600 V Tj = 25°C 750 IRM Maximum Reverse Leakage Current VR=600V Tj = 150°C 1000 µA IF(AV) Maximum Average Forward Current 50% duty cycle Tc = 80°C 600 A Tj = 25°C 1.5 1.9 VF Diode Forward Voltage IF = 600A VGE = 0V Tj = 150°C 1.4 V Tj = 25°C 125 trr Reverse Recovery Time Tj = 150°C 220 ns Tj = 25°C 27 Qrr Reverse Recovery Charge IF = 600A VR = 300V di/dt =5000A/µs Tj = 150°C 57 µC |
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