GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT

BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,

THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.

GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120

1719 - 20

20 Watt - 28 Volts, Class C

Microwave 1700 - 1900 MHz

GENERAL DESCRIPTION

The 1719-20 is a COMMON BASE transistor capable of providing 20 Watts

of Class C, RF output power over the band 1700-1900 MHz. This transistor is

designed for Microwave Broadband Class C amplifier applications. It includes

Input and Output prematching and utilizes Gold metalization and diffused

ballasting to provide high reliability and supreme ruggedness. The transistor

uses a fully hermetic High Temperature Solder sealed package.

CASE OUTLINE

55AW, STYLE 1

ABSOLUTE MAXIMUM RATINGS

Maximum Power Dissipation @ 25 C

67 Watts

o

Maximum Voltage and Current

BVces

Collector to Emitter Voltage

50 Volts

BVebo

Emitter to Base Voltage

3.5 Volts

Ic

Collector Current

6.0 A

Maximum Temperatures

Storage Temperature

- 65 to + 200 C

o

Operating Junction Temperature

+ 200 C

o

ELECTRICAL CHARACTERISTICS @ 25 C

O

SYMBOL

CHARACTERISTICS

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Pout

Pin

Pg

η

c

VSWR

1

Power Out

Power Input

Power Gain

Collector Efficiency

Load Mismatch Tolerance

F = 1900 MHz

Vcb = 28 Volts

Pin = 5.0 Watts

As Above

F = 1.7 GHz, Pin = 5.0

20

6.0

6.5

38

5.0

4:1

Watt

Watt

dB

%

BVces

BVebo

Icbo

h

FE

Cob

Collector to Emitter Breakdown

Emitter to Base Breakdown

Collector to Base Current

Current Gain

Output Capacitance *

Thermal Resistance

Ic = 10 mA

Ie = 10 mA

Vcb = 28 Volts

Vce = 5 V, Ic = 1.2 A

F =1 MHz, Vcb = 28 V

50

3.5

20

4.0

2.6

Volts

Volts

mA

pF

C/W

o

* Not measureable due to Output Match

Issue August 1996