EVERYTHING

IN A

NEW

LIGHT.

Description

This family of N-type silicon p-i-n

photodiodes is designed for use in a wide

variety of broad band low light level

applications covering the spectral range

from below 400 to over 1100 nm.

The different types making up this series

provide a broad choice in photosensitive

areas and in time response

characteristics. Each of the types is

antireflection coated to enhance

responsivity at 900 nm.

These characteristics make the devices

highly useful in HeNe and GaAs laser

detection systems and in optical

demodulation, data transmission, ranging,

and high-speed switching applications.

N-Type Silicon PIN Photodetectors

C30807, C30808, C30809, C30810, C30822, C30831

Features

• Broad Range of Photosensitive Surface Areas

0.2 mm2 to 100 mm2

• Low Operating Voltage VR = 45V

• Anti-Reflection Coated to Enhance Responsivity at 900 nm

• Hermetically-Sealed Packages

• Spectral Response Range 400 to 1100 nm

Maximum Ratings, Absolute-Maximum Values (All Types)

Photocurrent Density, jp at 22°C:

Average value, continuous operation . . . . . . . . . .5 mA/mm2

Peak value . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .20 mA/mm2

Average value, continuous operation . . . . . . . . . .10 max. mA

Peak value . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .20 max. mA

Ambient Temperature:

Soldering (for 5 seconds) . . . . . . . . . . . . . . . . . . . . . . . .200°C