HM5117400BTS-8 datasheet(5/25 Pages) HITACHI

Part #	HM5117400BTS-8

Description	4194304-WORD X 4-BIT DYNAMIC RANDOM ACCESS MEMORY

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Manufacturer	HITACHI [Hitachi Semiconductor]

Direct Link	http://www.renesas.com/eng

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5 / 25 page

HM5117400B Series

5

Absolute Maximum Ratings

Parameter

Symbol

Value

Unit

Voltage on any pin relative to V

SS

V

T

–1.0 to +7.0V

Supply voltage relative to V

SS

V

CC

–1.0 to +7.0V

Short circuit output current

Iout

50

mA

Power dissipationP

T

1.0W

Operating temperature

Topr

0 to +70

C

Storage temperature

Tstg

–55 to +125

C

Recommended DC Operating Conditions (Ta = 0 to +70 C)

Parameter

Symbol

Min

Typ

Max

Unit

Note

Supply voltageV

CC

4.5

5.0

5.5

V1

Input high voltageV

IH

2.4

—

6.5

V1

Input low voltageV

IL

–1.0

—

0.8

V1

Note:

1. All voltage referred to V

SS

DC Characteristics (Ta = 0 to +70 C, V

CC = 5 V

10%, V

SS = 0 V)

HM5117400B

-6

-7

-8

Parameter

Symbol Min

Max Min

Max Unit

Test Conditions

Operating current

*1, *2

I

CC1

—

110

—

100

—

90

mAt

RC = min

Standby currentI

CC2

—

2

—

2

—

2

mA

TTL interface

,

= V

IH

Dout = High-Z

—

1

—

1

—

1

mA

CMOS interface

,

V

CC – 0.2V

Dout = High-Z

Standby current

(L-version)

I

CC2

—

150

—

150

—

150

A

CMOS interface

,

V

CC – 0.2V

Dout = High-Z

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HM5117400BTS-8 Datasheet(PDF) 5 Page - Hitachi Semiconductor

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