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Silicon-Based Technology Corp.
Small-Signal Schottky Barrier Diodes
SBT103D Series
SBT103D series are Schottky Barrier Diodes fabricated by a series of
proprietary Schottky barrier patents and technologies (SBT
®) developed by
Silicon-Based
Technology
Corporation,
which
exhibit
high-performance
characteristics for modern switching, conversion and protection applications with
high speed and low power consumptions. The package types as described in this
data sheet are set forth in routine production; other packages are available upon
special orders.
Features and Advantages:
Low forward voltage drop(VF)
Low reverse leakage current (IR)
Very small conduction power loss
Very small switching power loss
Very high switching speed
Very high reliability
Electrical Characteristics : (@TA=25°C unless otherwise specified)
Characteristic
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
SBT103AD
40
SBT103BD
30
Reverse
Breakdown
Voltage
SBT103CD
VFM
20
-
-
V
IRS=100 A
0.35
IF=20mA
Maximum Forward Voltage Drop
VFM
-
-
0.50
V
IF=200mA
SBT103AD
VR=30V
SBT103BD
VR=20V
Maximum Peak
Reverse Current
SBT103CD
IRM
-
-
5.0
A
VR=10V
Total Capacitance
Cj
-
50
-
pF
VR=0V, f=1.0MHZ
Reverse Recovery Time
trr
-
10
-
ns
IF=IR=50mA to 200mA,
Irr=0.1 IR,RL=100
SBT
Silicon-Based Technology Corporation
1F,No.23, R&D Rd.I, Hsinchu Science Park, Taiwan, R.O.C
Tel 886-3-5777897
Fax 886-3-5779832
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