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AT12020-21 Datasheet(PDF) 1 Page - Advanced Semiconductor |
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AT12020-21 Datasheet(HTML) 1 Page - Advanced Semiconductor |
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1 / 1 page A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1 Specifications are subject to change without notice. CHARACTERISTICS TC = 25 OC NONE SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIM UNITS VR IR = 10 µA 120 V VF IF = 1 mA 1.0 V IR VR = 100 V 100 µµµµA CT VR = 4 V f = 1.0 MHz 36 38 40 pF ∆∆∆∆C T CT0/ CT120 f = 1.0 MHz 10.0 --- Q VR = 4 V f = 50 MHz 300 --- RS IF = 10 mA f = 2400 MHz 0.9 Ω Ω Ω Ω SILICON ABRUPT VARACTOR DIODE AT12020-21 DESCRIPTION: The AT12020-21 is Designed for High Performance RF and Microwave Applications Requiring an Abrupt Variable Capacitance Characteristic. FEATURES INCLUDE: • High Tuning Ratio, ∆∆∆∆C T = 10 MIN. • High Quality Factor, Q = 300 MIN. • Hermetic Package, C P = .20 pF LS = .42 nH MAXIMUM RATINGS IF 200 mA VR 120 V PDISS 1.75W @ TC 25 OC TJ -55 OC to +150 OC TSTG -55 OC to +150 OC θθθθ JC 70 OC/W PACKAGE STYLE 21 |
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