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J02015A Datasheet(PDF) 1 Page - Advanced Semiconductor

Part No. J02015A
Description  NPN SILICON RF POWER TRANSISTOR
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Maker  ASI [Advanced Semiconductor]
Homepage  http://www.advancedsemiconductor.com
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A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
• NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
1/1
Specifications are subject to change without notice.
CHARACTERISTICS TC = 25 °C
SYMBOL
NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
UNITS
BVCEO
IC = 50 mA
30
V
BVCES
IC = 50 mA
60
V
BVEBO
IE = 10 mA
4.0
V
ICBO
VCB = 30 V
5.0
mA
hFE
VCE = 5.0 V
IC = 2.0 A
20
80
---
COB
VCB = 28 V
f = 1.0 MHz
80
pF
PG
ηηηη
D
VCC = 28 V
POUT = 70 W
f = 400 MHz
8.4
60
dB
%
NPN SILICON RF POWER TRANSISTOR
J02015A
DESCRIPTION:
The
ASI J02015A is Designed for
High Power Class C Amplifier in, 225
to 400 MHz Military Communication
Equipment.
FEATURES:
• Internal Input Matching Network
• P
G = 8.4 dB at 70 W/400 MHz
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC
8.0 A
VCBO
60 V
VCEO
30 V
VEBO
4.0 V
PDISS
220 W @ TC = 25 °C
TJ
-65 °C to +200 °C
TSTG
-65 °C to +150 °C
θθθθ
JC
1.25 °C/W
PACKAGE STYLE .500 6L FLG
MIN IMU M
inche s / m m
.490 / 12.45
.210 / 5.3 3
.003 / 0.0 8
B
C
D
E
F
G
A
MAX IMU M
.220 / 5.5 9
.007 / 0.1 8
.510 / 12.95
inche s / m m
.725 / 18.42
H
DIM
K
L
I
J
.970 / 24.64
.980 / 24.89
.170 / 4.3 2
N
M
.120 / 3.0 5
.135 / 3.4 3
.150 / 3.4 3
.160 / 4.0 6
.125 / 3.1 8
.090 / 2.2 9
.105 / 2.6 7
.285 / 7.2 4
.150 / 3.8 1
.045 / 1.1 4
E
F
.7 25/18 ,4 2
I
G
J
K
L
M
A
D
C
B
2x Ø N
FU LL R
H
.835 / 21.21
.865 / 21.97
.210 / 5.3 3
.200 / 5.0 8




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