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MRF422MP Datasheet(PDF) 1 Page - Advanced Semiconductor |
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MRF422MP Datasheet(HTML) 1 Page - Advanced Semiconductor |
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1 / 1 page A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1 Specifications are subject to change without notice. CHARACTERISTICS TC = 25 °C NONE SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 200 mA 35 V BVCES IC = 100 mA 85 V BVCBO IC = 100 mA 85 V BVEBO IE = 10 mA 3.0 V ICES VCE = 28 V 20 mA hFE VCE = 5.0 V IC = 5.0 A 10 30 120 --- Cob VCB = 28 V f = 1.0 MHz 420 pF Pout VCE = 28 V f = 30 MHz 150 W(PEP) GPE ηηηη IMD VCC = 28 V ICQ = 150 mA Pout = 150 W (PEP) IC(max) = 6.7 A f = 30 MHz 10 13 45 -33 dB % dB NPN SILICON RF POWER TRANSISTOR MRF422/MP DESCRIPTION: The ASI MRF422 is Designed for 2.0 MHz to 30 MHz, 28 V High Power Linear Amplifier Applications. For hFE Matched Pairs Order ASI MRF422MP. MAXIMUM RATINGS I 20 A V 40 V PDISS 290 W @ TC = 25 °C TJ -65 °C to +150 °C TSTG -65 °C to +150 °C θθθθ JC 0.6 °C/W PACKAGE STYLE .500 4L FLG 1 = COLLECTOR 3 = BASE 2 & 4 = EMITTER |
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Similar Description - MRF422MP |
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