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FM2G100US60 Datasheet(PDF) 6 Page - Fairchild Semiconductor |
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FM2G100US60 Datasheet(HTML) 6 Page - Fairchild Semiconductor |
6 / 9 page ©2000 Fairchild Semiconductor International FM2G100US60 Rev. A 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 1E-3 0.01 0.1 1 T C = 25 ℃ IGBT : DIODE : Rectangular Pulse Duration [sec] 1 10 100 1000 1 10 100 Safe Operating Area V GE = 20V, TC = 100 o C Collector-Emitter Voltage, V CE [V] 0.3 1 10 100 1000 0.1 1 10 100 500 Single Nonrepetitive Pulse T C = 25 ℃ Curves must be derated linerarly with increase in temperature 50us 100us 1㎳ DC Operation I C MAX. (Continuous) I C MAX. (Pulsed) Collector-Emitter Voltage, V CE [V] 0 100 200 300 400 500 0 3 6 9 12 15 200 V V CC = 100 V 300 V Common Emitter R L = 3 Ω T C = 25 ℃ Gate Charge, Qg [ nC ] 20 30 40 50 60 70 80 90 100 100 1000 10000 Eon Eoff Eon Eoff Common Emitter V CC = 300V, VGE = ± 15V R G = 2.4 Ω T C = 25℃ T C = 125 ℃ Collector Current, I C [A] 0 100 200 300 400 500 600 700 0.1 1 10 100 600 Single Nonrepetitive Pulse T J ≤ 125℃ V GE = 15V R G = 2.4 Ω Collector-Emitter Voltage, V CE [V] Fig 14. Gate Charge Characteristics Fig 13. Switching Loss vs. Collector Current Fig 15. SOA Characteristics Fig 16. Turn-Off SOA Characteristics Fig 17. RBSOA Characteristics Fig 18. Transient Thermal Impedance |
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