© 2006 Fairchild Semiconductor Corporation

www.fairchildsemi.com

FSCM0465R Rev. 1.0.1

6

Electrical Characteristics

Notes:

1. Pulse Test: Pulse width

≤ 300µS, duty ≤ 2%

2. These parameters, although guaranteed at the design, are not tested in mass production.

3. These parameters indicate the inductor current. Where packages are I2PAK or D2PAK, this should be decreased to

2.0A by external resistor.

4. MOSFET switching time is essentially independent of operating temperature.

Symbol

Parameter

Condition

Min. Typ. Max. Unit

SenseFET SECTION

Zero Gate Voltage Current

-

-

250

µA

-

2.2

2.6

Ω

Output Capacitance

-

60

-

pF

Turn-on Delay Time

(4)

-23-

ns

Rise Time

-

20

-

Turn-off Delay Time

-

65

-

Fall Time

-

27

-

CONTROL SECTION

Switching Frequency

60

66

72

kHz

Δf

MOD

Switching Frequency Modulation Range

-

±3

-

kHz

Switching Frequency Modulation Cycle

-

4

-

ms

Switching Frequency Stability

10V

≤ V

013

%

Δf

OSC

−25°C ≤ T

-

±5

±10

%

Maximum Duty Cycle

75

80

85

%

Minimum Duty Cycle

-

-

0

%

UVLO Threshold Voltage

11

12

13

V

789

V

Feedback Source Current

0.7

0.9

1.1

mA

Internal Soft-Start Time

10

15

20

ms

BURST MODE SECTION

Burst Mode Voltages

0.4

0.5

0.6

V

0.24

0.3

0.36

V

PROTECTION SECTION

2.2

2.5

2.8

A

Over-Voltage Protection

18

19

20

V

130

145

160

°C

Shutdown Delay Current

3.5

5.3

7

µA

Shutdown Feedback Voltage

5.5

6

6.5

V

TOTAL DEVICE SECTION

Startup Current

-

20

40

µA

Operating Supply Current

-2.5

5

mA