LMN200B01 datasheet(6/10 Pages) DIODES

Part #	LMN200B01

Description	200 mA LOAD SWITCH FEATURING PRE-BIASED PNP TRANSISTOR AND N-MOSFET WITH PULL DOWN RESISTOR

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Manufacturer	DIODES [Diodes Incorporated]

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6 / 10 page

DS30651 Rev. 7 - 2

6 of 10

LMN200B01

www.diodes.com

V

, GATE-SOURCE VOLTAGE (V)

GS

Fig. 10 Transfer Characteristics

0

0.2

0.4

0.6

0.8

1

1.2

1.4

0

1

2

3

4

5

T =

A

-55

°C

T =

A

25

°C

T =

A

85

°C

T =

A

125

°C

T =

A

150

°C

V

= 10V

DS

T , JUNCTION TEMPERATURE (°C)

J

Fig. 11 Gate Threshold Voltage

vs. Junction Temperature

0

1.2

1.4

1.6

1.8

2

2.2

-50

-75

-25

0

25

50

75

100 125 150

V

= 10V

DS

V= V

DS

GS

I = 0.25mA

D

Pulsed

I , DRAIN CURRENT (A)

D

Fig. 12 Static Drain-Source On-Resistance

vs. Drain Current

0.001

0.01

0.1

1

0

1

2

3

4

5

V

= 5V

GS

Pulsed

T = -55

°C

A

T = 25

°C

A

T = 125

°C

A

T = 150

°C

A

T = 85

°C

A

1

I , DRAIN CURRENT (A)

D

Fig. 13 Static Drain-Source On-Resistance

vs. Drain Current

4

0

1

2

3

0.001

0.01

0.1

V

= 10V

GS

Pulsed

T = 150

°C

A

T = 125

°C

A

T = 85

°C

A

T = 25

°C

A

T = -55

°C

A

0

V

GATE SOURCE VOLTAGE (V)

GS,

Fig. 14 Static Drain-Source On-Resistance

vs. Gate-Source Voltage

1

2

3

4

5

6

7

0

2

4

6

8

10

12

14

16

18

20

I = 115mA

D

I = 50mA

D

T = 25

°C

A

Pulsed

V

, DRAIN-SOURCE VOLTAGE (V)

DS

Fig. 9 Output Characteristics

T = 25

°C

A

0

1

2

3

4

5

6

7

0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

V

= 8V

GS

V

= 10V

GS

V

= 3V

GS

V

= 4V

GS

V

= 5V

GS

V

= 6V

GS

Typical N-Channel MOSFET (Q2) Characteristics

Similar Part No. - LMN200B01

Manufacturer	Part #	Datasheet	Description
Diodes Incorporated	LMN200B02	522Kb / 10P	200 mA LOAD SWITCH FEATURING PRE-BIASED PNP TRANSISTOR AND N-MOSFET WITH GATE PULL DOWN RESISTOR DS30658 Rev. 4 - 2
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Manufacturer	Part #	Datasheet	Description
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