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LMN200B02-7 Datasheet(PDF) 4 Page - Diodes Incorporated |
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LMN200B02-7 Datasheet(HTML) 4 Page - Diodes Incorporated |
4 / 10 page DS30658 Rev. 4 - 2 4 of 10 LMN200B02 www.diodes.com Electrical Characteristics: N-MOSFET with Gate Pull-Down Resistor (Q2) @ TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 4) Drain-Source Breakdown Voltage, BVDSS V(BR)DSS 60 V VGS = 0V, ID = 10 µA Zero Gate Voltage Drain Current (Drain Leakage Current) IDSS 1 µA VGS =0V, VDS = 60V Gate-Body Leakage Current, Forward IGSSF 0.95 mA VGS = 20V, VDS = 0V Gate-Body Leakage Current, Reverse IGSSR -0.95 m Α VGS = -20V, VDS = 0V ON CHARACTERISTICS (Note 4) Gate Source Threshold Voltage (Control Supply Voltage) VGS(th) 1 1.86 2.2 V VDS = VGS, ID = 0.25mA Static Drain-Source On-State Voltage VDS(on) 0.08 1.5 V VGS = 5V, ID = 50mA 0.15 3.75 VGS = 10V, ID = 115mA On-State Drain Current ID(on) 500 mA VGS = 10V, VDS ≥2XVDS(ON) Static Drain-Source On Resistance RDS(on) 1.55 3 Ω VGS = 5V, ID = 50mA 1.4 2 VGS = 10V, ID = 500mA Forward Transconductance gFS 80 240 mS VDS ≥2XVDS(ON), ID = 115 mA 80 350 VDS ≥2XVDS(ON), ID = 200 mA Gate Pull-Down Resistor, +/- 30% R3 37 ΚΩ DYNAMIC CHARACTERISTICS Input Capacitance Ciss 50 pF VDS = -25V, VGS = 0V, ƒ= 1MHz Output Capacitance Coss 25 pF Reverse Transfer Capacitance Crss 5 pF SWITCHING CHARACTERISTICS* Turn-On Delay Time td(on) 20 ns VDD = 30V, VGS =10V, ID = 200mA, RG = 25 Ohm, RL = 150 Ohm Turn-Off Delay Time td(off) 40 ns SOURCE-DRAIN (BODY) DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward On-Voltage VSD 0.88 1.5 V VGS = 0V, IS = 115 mA* Maximum Continuous Drain-Source Diode Forward Current (Reverse Drain Current) IS 115 mA Maximum Pulsed Drain-Source Diode Forward Current ISM 800 mA Typical Characteristics 0 50 25 50 75 100 125 150 175 T , AMBIENT TEMPERATURE (°C) A Fig. 3, Max Power Dissipation vs Ambient Temperature (Total Device) 100 150 300 350 200 250 0 * Pulse Test: Pulse width, tp<300 µS, Duty Cycle, d<=0.02 Notes: 4. Short duration test pulse used to minimize self-heating effect. |
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