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MIO1200-25E10 Datasheet(PDF) 2 Page - IXYS Corporation

Part # MIO1200-25E10
Description  IGBT Module Single switch
Download  6 Pages
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Manufacturer  IXYS [IXYS Corporation]
Direct Link  http://www.ixys.com
Logo IXYS - IXYS Corporation

MIO1200-25E10 Datasheet(HTML) 2 Page - IXYS Corporation

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MIO 1200-25E10
Advanced Technical Information
Diode
Symbol
Conditions
Maximum Ratings
I
F80
T
C =
80°C
1200
A
I
FSM
V
R = 0 V; TVJ = 125°C; tp = 10 ms; half-sinewave
11000
A
Symbol
Conditions
Characteristic Values
min.
typ.
max.
V
F
②
I
F = 1200 A;
T
VJ =
25°C
1.75
V
T
VJ = 125°C
1.8
V
I
RM
1180
A
t
rr
970
ns
Q
RR
1150
µC
E
rec
990
mJ
R
thJC
0.017 K/W
② Forward voltage is given at chip level
Module
Symbol
Conditions
Maximum Ratings
T
JM
max. junction temperature
+150
°C
T
VJ
Operating temperature
-40...+125
°C
T
stg
Storage temperature
-40...+125
°C
V
ISOL
50 Hz
5000
V~
M
d
Mounting torque
Base-heatsink, M6 screws
4 - 6
Nm
Main terminals, M8 screws
8 - 10
Nm
Symbol
Conditions
Characteristic Values
min.
typ. max.
d
A
Clearance distance
terminal to base
23
mm
terminal to terminal
19
mm
d
S
Surface creepage
terminal to base
33
mm
distance
terminal to terminal
33
mm
L
σσσσσ
Module stray inductance, C to E terminal
10
nH
R
term-chip *
)
Resistance terminal to chip
0.085
m
Ω
R
thCH
per module;
λ grease = 1 W/m•K
0.006
K/W
Weight
1500
g
*) V = V
CE(sat) + Rterm-chip · IC
resp. V = V
F + Rterm-chip · IF
V
CC = 1250 V; IC = 1200 A;
V
GE = ±15 V; RG = 1.5 Ω; TVJ = 125°C
Inductive load; Lσ = 100nH


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